Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

NX8300BE-CC Datasheet(PDF) 1 Page - California Eastern Labs

Part # NX8300BE-CC
Description  InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE FOR 2.5 Gb/s APPLICATION
Download  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  CEL [California Eastern Labs]
Direct Link  http://www.cel.com
Logo CEL - California Eastern Labs

NX8300BE-CC Datasheet(HTML) 1 Page - California Eastern Labs

  NX8300BE-CC Datasheet HTML 1Page - California Eastern Labs NX8300BE-CC Datasheet HTML 2Page - California Eastern Labs NX8300BE-CC Datasheet HTML 3Page - California Eastern Labs NX8300BE-CC Datasheet HTML 4Page - California Eastern Labs NX8300BE-CC Datasheet HTML 5Page - California Eastern Labs  
Zoom Inzoom in Zoom Outzoom out
 1 / 5 page
background image
NEC's 1310 nm
InGaAsP MQW DFB LASER DIODE
IN COAXIAL PACKAGE
FOR 2.5 Gb/s APPLICATION
NX8300BE-CC
NX8300CE-CC
FEATURES
• INTERNAL OPTICAL ISOLATOR
• HIGH-SPEED RESPONSE:
tr = 40 ps, tf = 100 ps
• PEAK EMISSION WAVELENGTH:
λp = 1310 nm
• OPTICAL OUTPUT POWER:
Pf = 2.0 mW
• WIDE OPERATING TEMPERATURE RANGE:
TC = 0 to +75°C
• InGaAs MONITOR PIN-PD
• WITH SC-UPC CONNECTOR
• BASED ON TELCORDIA RELIABILITY
NEC's NX8300BE-CC and NX8300CE-CC are 1310 nm Dis-
tributed Feed-Back (DFB) laser diode coaxial modules with an
internal optical isolator. These modules are ideal as a light
source for Synchronous Digital Hierarchy (SDH) systems,
STM-16, short-haul S-16.1 and long-haul L-16.1 ITU-T recom-
mendations.
DESCRIPTION
California Eastern Laboratories
PART NUMBER
NX8300BE-CC, NX8300CE-CC
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
Pf
Optical Output Power from Fiber, CW
mW
2.0
VOP
Operating Voltage, Pf = 2.0 mW
V
1.2
1.6
ITH
Threshold Current
TC = +25°C
mA
15
25
mA
45
PTH
Threshold Output Power, IF = ITH
µW
50
IMOD
Modulation Current
Pf = 2.0 mW, TC = 25°C
mA
11
20
35
Pf = 2.0 mW
mA
10
40
ηd
Differential Efficiency
Pf = 2.0 mW, TC = 25°C
W/A
0.060
0.100
0.150
Pf = 2.0 mW
W/A
0.050
0.200
ηd
Temperature Dependence of Differential Efficiency,
dB
-3
-1.6
Kink
Kink, Pf = Up to 2.4 mW (Refer to defenitions)
%
±20
λp
Peak Emission Wavelength, Pf = 2.0 mW
nm
1285
1310
1330
∆λ/∆T
Temperature Dependence of Peak Emission Wavelength
nm/°C
0.09
0.1
∆λ
Spectral Width, Pf = 2.0 mW, -20 dB down width
nm
0.1
1.0
SMSR
Side Mode Suppression Ratio, Pf = 2.0 mW
dB
30
40
fr
Relaxation Oscillation Frequency, Pf = 2.0mW
GHz
8.0
tr
Rise Time, 10 to 90%, Ppk = 2.0 mW, IF = ITH
ps
40
125
tf
Fall Time, 90 to 10%, Ppk = 2.0 mW, IF = ITH
ps
100
200
Im
Monitor Current, VR = 5 V, Pf = 2.0 mW
µA
100
500
1000
ID
Monitor Dark Current
VR = 5 V, TC = 25 °C
nA
0.1
50
VR = 5 V
nA
10
500
Ct
Monitor PD Terminal Capacitance, VR = 5 V, f = 1 MHz
pF
1.0
20
LINm
Linearity, VR = 5 V, Pf = 0.2 to 2.0 mW (Refer to defenitions)
%
10
γ1
Tracking Error, Im = const.(Refer to defenitions)
dB
0.5
1.0
ELECTRO-OPTICAL CHARACTERISTICS (TC = 0 to +75°C, unless otherwise specified)
ηd = 10 log
ηd (@ TC °C)
ηd (@ 25 °C)


Similar Part No. - NX8300BE-CC

ManufacturerPart #DatasheetDescription
logo
California Eastern Labs
NX8300BE-CC CEL-NX8300BE-CC Datasheet
126Kb / 5P
   NECs 1310 nm InGaAsP MQW-DFB LASER DIODE
logo
Renesas Technology Corp
NX8300BE-CC RENESAS-NX8300BE-CC Datasheet
245Kb / 13P
   LASER DIODE
2002
More results

Similar Description - NX8300BE-CC

ManufacturerPart #DatasheetDescription
logo
California Eastern Labs
NX8508 CEL-NX8508 Datasheet
383Kb / 5P
   NECs InGaAsP MQW-DFB LASER MODULE IN COAXIAL PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
NX6307 CEL-NX6307 Datasheet
401Kb / 5P
   1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS
NX6508 CEL-NX6508 Datasheet
332Kb / 4P
   NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
NX8504BE-CC CEL-NX8504BE-CC Datasheet
111Kb / 5P
   1550 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE for 622 Mb/s APPLICATION
logo
Renesas Technology Corp
NX6410GH RENESAS-NX6410GH Datasheet
178Kb / 8P
   LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
NX6411GH RENESAS-NX6411GH_15 Datasheet
170Kb / 8P
   LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
NX6411GH RENESAS-NX6411GH Datasheet
177Kb / 8P
   LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
NX6410GH RENESAS-NX6410GH_15 Datasheet
170Kb / 8P
   LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
logo
California Eastern Labs
NX8303BG-CC CEL-NX8303BG-CC Datasheet
98Kb / 4P
   NECs 1310 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE FOR 622 Mb/s APPLICATION
NX8504BE CEL-NX8504BE Datasheet
112Kb / 5P
   NECs 1550 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE for 622 Mb/s APPLICATION
More results


Html Pages

1 2 3 4 5


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com