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NESG2101M05 Datasheet(PDF) 1 Page - California Eastern Labs |
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NESG2101M05 Datasheet(HTML) 1 Page - California Eastern Labs |
1 / 15 page NESG2101M05 NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR M05 DESCRIPTION NEC's NESG2101M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators NECʼs low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs. California Eastern Laboratories • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz • LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance FEATURES PART NUMBER NESG2101M05 PACKAGE OUTLINE M05 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX P1dB Output Power at 1 dB Compression Point dBm 21 VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz GL Linear Gain, VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz dB 15 NF Noise Figure at VCE = 2 V, IC = 10 mA, f = 2 GHz, dB 0.9 1.2 ZS = ZSOPT, ZL = ZLOPT Ga Associated Gain at VCE = 2 V, IC = 10 mA, f = 2 GHz, dB 11.0 13.0 ZS = ZSOPT, ZL = ZLOPT NF Noise Figure at VCE = 2 V, IC = 7mA, f = 1 GHz, dB 0.6 ZS = ZSOPT, ZL = ZLOPT Ga Associated Gain at VCE = 2 V, IC = 7 mA, f = 1 GHz, dB 19.0 ZS = ZSOPT, ZL = ZLOPT MSG Maximum Stable Gain1 at VCE = 3 V, IC = 50 mA, f = 2 GHz dB 14.5 17.0 |S21E|2 Insertion Power Gain at VCE = 3 V, IC = 50 mA, f = 2 GHz dB 11.5 13.5 fT Gain Bandwidth Product at VCE = 3 V, IC = 50 mA, f = 2 GHz GHz 14 17 Cre Reverse Transfer Capacitance2 at VCB = 2 V, IC = 0 mA, f = 1 MHz pF 0.4 0.5 ICBO Collector Cutoff Current at VCB = 5V, IE = 0 nA 100 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 100 hFE DC Current Gain3 at VCE = 2 V, IC = 15 mA 130 190 260 ELECTRICAL CHARACTERISTICS (TA = 25°C) S21 S12 Notes: 1. MSG = 2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin. 3. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %. |
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