DTB743XE datasheet(1/2 Pages) ROHM

Part #	DTB743XE

Description	-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)

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Manufacturer	ROHM [Rohm]

Direct Link	http://www.rohm.com

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DTB743XE / DTB743XM

Transistors

1/1

-200mA / -30V Low VCE (sat) Digital transistors

(with built-in resistors)

DTB743XE / DTB743XM

Applications

Inverter, Interface, Driver

External dimensions (Unit : mm)

1.6

0.7

0.15

0.55

0.2

1.0

0.3

(2)

0.5

(3)

0.2

(1)

(3)

0.32

0.8

1.2

0.13

0.5

0.22

0.4 0.4

(2)

(1)

VMT3

(1) GND

(2) IN

(3) OUT

(1) IN

(2) GND

(3) OUT

EMT3

JEITA No. (SC-75A)

JEDEC No. <SOT-416>

DTB743XE

DTB743XM

Abbreviated symbol : M33

Each lead has same dimensions

Feature

1) VCE(sat) is lower than the conventional products.

2) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

3) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the

input. They also have the advantage of almost

completely eliminating parasitic effects.

4) Only the on / off conditions need to be set for

operation, making the device design easy.

Structure

PNP epitaxial plannar silicon transistor

(Resistor built-in type)

Absolute maximum ratings (Ta=25

°C)

Packaging specifications

EMT3

VMT3

DTB743XE

Part No.

DTB743XM

TL

3000

−

T2L

8000

−

Package

Packaging type

Taping

Code

Basic ordering

unit (pieces)

Parameter

Symbol

VCC

−30

−20 to +7

−200

150

−55 to +150

DTB743XE DTB743XM

V

VIN

V

mA

mW

IC (max)

PD

Tj

Tstg

Unit

C

Limits

∗1

∗1 Characteristics of built-in transistor.

∗2 Each terminal mounted on a recommended land.

∗2

Supply voltage

Input voltage

Collector current

Power dissipation

Junction temperature

Storage temperature

Electrical characteristics (Ta=25

°C)

Equivalent circuit

Parameter

Symbol

VI(off)

VI(on)

VO(on)

II

IO(off)

R1

GI

R2/R1

fT

Min.

−

−2.5

−

3.29

140

1.7

−

−70

−

4.7

−

2.1

260

−0.3

−

−300

−1.4

−0.5

6.11

−

2.6

−

V

VCC=

− 5V, IO= −100µA

VO=

−0.3V, IO= −20mA

IO/II=

−50mA / −2.5mA

VI=

−5V

VCC=

−30V, VI=0V

VO=

−2V, IO= −100mA

VCE=

−10V, IE=5mA, f=100MHz

mV

mA

µA

k

Ω

−

−−

−

MHz

Typ.

Max.

Unit

Conditions

Input voltage

Output voltage

Input current

Output current

Input resistance

DC current gain

Resistance ratio

Transition frequency

∗ Characteristics of built-in transistor.

∗

R1

R1=4.7k

Ω / R2=10kΩ

R2

IN

GND(+)

OUT

IN

GND(+)

OUT

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