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NESG2031M05-T1-A Datasheet(PDF) 1 Page - California Eastern Labs |
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NESG2031M05-T1-A Datasheet(HTML) 1 Page - California Eastern Labs |
1 / 13 page NPN SiGe RF TRANSISTOR NESG2031M05 NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR M05 NEC's NESG2031M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. NECʼs low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs. • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) • LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 21.5 dB at 2 GHz • LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance • Pb Free Available (-A) Notes: 1. MSG = 2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin. 3. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %. PART NUMBER NESG2031M05 PACKAGE OUTLINE M05 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NF Noise Figure at VCE = 2 V, IC = 5 mA, f = 5.2 GHz, dB 1.3 ZS = ZSOPT, ZL = ZLOPT Ga Associated Gain at VCE = 2 V, IC = 5 mA, f = 5.2 GHz, dB 10.0 ZS = ZSOPT, ZL = ZLOPT NF Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, dB 0.8 1.1 ZS = ZSOPT, ZL = ZLOPT Ga Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz, dB 15.0 17.0 ZS = ZSOPT, ZL = ZLOPT MSG Maximum Stable Gain1 at VCE = 3 V, IC = 20 mA, f = 2 GHz dB 19.0 21.5 |S21E|2 Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz dB 16.0 18.0 P1dB Output Power at 1dB Compression Point at dBm 13 VCE = 3 V, IC = 20 mA, f = 2 GHz OIP3 Output 3rd Order Intercept Point at VCE = 3 V, IC = 20 mA, f = 2 GHz dBm 23 fT Gain Bandwidth Product at VCE = 3 V, IC = 20 mA, f = 2 GHz GHz 20 25 Cre Reverse Transfer Capacitance2 at VCB = 2 V, IC = 0 mA, f = 1 GHz pF 0.15 0.25 ICBO Collector Cutoff Current at VCB = 5V, IE = 0 nA 100 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 nA 100 hFE DC Current Gain3 at VCE = 2 V, IC = 5 mA 130 190 260 ELECTRICAL CHARACTERISTICS (TA = 25°C) S21 S12 FEATURES DESCRIPTION Date Published: June 22, 2005 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. |
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