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NESG2031M05-T1-A Datasheet(PDF) 1 Page - California Eastern Labs

Part # NESG2031M05-T1-A
Description  NPN SiGe HIGH FREQUENCY TRANSISTOR
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Manufacturer  CEL [California Eastern Labs]
Direct Link  http://www.cel.com
Logo CEL - California Eastern Labs

NESG2031M05-T1-A Datasheet(HTML) 1 Page - California Eastern Labs

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NPN SiGe RF TRANSISTOR
NESG2031M05
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
M05
NEC's NESG2031M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide
range of applications including low noise amplifiers, medium power amplifiers, and oscillators.
NECʼs low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs.
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
LOW NOISE FIGURE:
NF = 0.8 dBm at 2 GHz
NF = 1.3 dBm at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 21.5 dB at 2 GHz
LOW PROFILE M05 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
Pb Free Available (-A)
Notes:
1. MSG =
2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
3. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
PART NUMBER
NESG2031M05
PACKAGE OUTLINE
M05
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF
Noise Figure at VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
dB
1.3
ZS = ZSOPT, ZL = ZLOPT
Ga
Associated Gain at VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
dB
10.0
ZS = ZSOPT, ZL = ZLOPT
NF
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz,
dB
0.8
1.1
ZS = ZSOPT, ZL = ZLOPT
Ga
Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz,
dB
15.0
17.0
ZS = ZSOPT, ZL = ZLOPT
MSG
Maximum Stable Gain1 at VCE = 3 V, IC = 20 mA, f = 2 GHz
dB
19.0
21.5
|S21E|2
Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz
dB
16.0
18.0
P1dB
Output Power at 1dB Compression Point at
dBm
13
VCE = 3 V, IC = 20 mA, f = 2 GHz
OIP3
Output 3rd Order Intercept Point at VCE = 3 V, IC = 20 mA, f = 2 GHz dBm
23
fT
Gain Bandwidth Product at VCE = 3 V, IC = 20 mA, f = 2 GHz
GHz
20
25
Cre
Reverse Transfer Capacitance2 at VCB = 2 V, IC = 0 mA, f = 1 GHz
pF
0.15
0.25
ICBO
Collector Cutoff Current at VCB = 5V, IE = 0
nA
100
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
100
hFE
DC Current Gain3 at VCE = 2 V, IC = 5 mA
130
190
260
ELECTRICAL CHARACTERISTICS (TA = 25°C)
S21
S12
FEATURES
DESCRIPTION
Date Published: June 22, 2005
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.


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