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PMBZ5228B Datasheet(PDF) 3 Page - NXP Semiconductors |
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PMBZ5228B Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page 1999 May 17 3 Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Notes 1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm. 2. Device mounted on an FR4 printed circuit-board. ELECTRICAL CHARACTERISTICS Total series Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 200 mA IZSM non-repetitive peak reverse current tp = 100 µs; square wave; Tj =25 °C prior to surge see Table “Per type” Ptot total power dissipation Tamb =25 °C; note 1 − 300 mW Tamb =25 °C; note 2 − 250 mW PZSM non-repetitive peak reverse power dissipation tp = 100 µs; square wave; Tj =25 °C prior to surge; see Fig.2 − 40 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 200 mA; see Fig.3 1.1 V |
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