NE650103M datasheet(3/7 Pages) CEL

Part #	NE650103M

Description	10 W L & S-BAND POWER GaAs MESFET

Download	7 Pages

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Manufacturer	CEL [California Eastern Labs]

Direct Link	http://www.cel.com

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TYPICAL PERFORMANCE CURVES (TA = 25°C)

NE650103M

0

15

20

25

30

35

40

45

-20

0

20

40

60

80

100

VDS = 10 V,

IDSQ = 1.5 A

F = 880 MHz

510

15

20

25

0

Pout

PAE

OUTPUT POWER AND

POWER ADDED EFFICIENCY

Input Power, PIN (dBm)

-20

-25

-30

-35

-40

-45

-50

-55

-60

20

25

30

35

40

VDS = 10 V,

F1 = 1.9575 GHz

F2 = 1.9575 GHz

IDSQ = 1 A

IDSQ = 1.5 A

IDSQ = 2 A

THIRD ORDER INTERMODULATION

DISTORTION vs. OUTPUT POWER

2-Tone Output Power, POUT (dBm)

45

40

35

30

25

20

10

15

20

25

30

35

0

20

40

60

80

100

VDS = 10 V,

IDSQ = 1.5 A

Rg = 100

Ω

F = 1.5 GHz

OUTPUT POWER AND

POWER ADDED EFFICIENCY

Input Power, PIN (dBm)

10

15

20

25

30

35

0

20

25

30

35

40

45

Pout (IDSQ = 1 A)

Pout (IDSQ = 1.5 A)

Pout (IDSQ = 2 A)

PAE (IDSQ = 1 A)

PAE (IDSQ = 1.5 A)

PAE (IDSQ = 2 A)

60

80

100

40

f =1.96 GHz

VDS = 10 V

OUTPUT POWER AND

POWER ADDED EFFICIENCY

Input Power, PIN (dBm)

10

0

1

2

3

4

15

20

25

30

35

-10

0

10

20

30

ID (DSQ = 1 A)

ID (DSQ = 2 A)

IG (DSQ = 1.5 A

ID (DSQ = 1.5 A)

IG (DSQ = 1 A)

IG (DSQ = 2 A)

f =1.96 GHz

VDS = 10 V

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