NE85002

SERIES

FEATURES

•

CLASS A OPERATION

•

•

BROADBAND CAPABILITY

•

PACKAGE OPTIONS:

Chip

Hermetic Package

•

PARTIALLY MATCHED INPUT FOR PACKAGED

DEVICES

•

PROVEN RELIABILITY

DESCRIPTION

The NE8500295 power GaAs FET covers the 3.5 to 8.5 GHz

frequency range with three different Class A, 2 W partially

matched devices. Each packaged device has an input lumped

element matching network.

The NE8500200 is the six-cell recessed gate chip used in the

"95" package. The device incorporates a Ti-Al gate structure,

PART NUMBER

NE8500295-4

NE8500295-6

NE8500295-8

PACKAGE OUTLINE

00 (CHIP)

95

95

95

SYMBOLS

PARAMETERS AND CONDITIONS UNITS

MIN

TYP MAX

MIN

TYP MAX

MIN

TYP MAX

MIN

TYP MAX

Saturated Drain Current

mA

950

1900

950

1900

950

1900

950

1900

Pinch-off Voltage

V

-3.0

-1.0

-3.0

-1.0

-3.0

-1.0

-3.0

-1.0

Transconductance

mS

600

600

600

600

Drain-Gate Breakdown Voltage

V

18

18

18

18

mA

-2.4

2.4

-2.4

2.4

-2.4

2.4

-2.4

2.4

Thermal Resistance (Channel-to-Case)

°C/W

10

15

15

15

15

Power Output at Test Point

dBm

33.8

33.5

dBm

33.8

dBm

33.8

Linear Gain

dB

8.0

9.0

10.5

9.5

8.0

Power Added Efficiency

%42

474539

TYPICAL PERFORMANCE

PART

FREQUENCY

NUMBER

RANGE

(dBm)

(GHz)

(dB)

NE8500200

33.8 MIN

2.0 to 10

8.0 MIN

NE8500295-4

33.8 MIN

3.5 to 4.5

10.5 MIN

NE8500295-6

33.8 MIN

5.5 to 6.5

9.5 MIN

NE8500295-8

33.5 MIN

7.5 to 8.5

8.0 MIN

SELECTION CHART

2 WATT C-BAND

POWER GaAs MESFET

Notes:

1. Six-cell chip: all cells are used. RF performance of the chip is

determined by packaging 10 chips per wafer. Wafer rejection

criteria for standard devices are 2 rejects per 10 samples.

2. This is a production test. Test frequencies are: -4 @ 4.2 GHz,

-6 @ 6.5 GHz, -8 and NE8500200 @ 8.5 GHz.

3.

California Eastern Laboratories

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