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NE85002 Datasheet(PDF) 1 Page - NEC |
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NE85002 Datasheet(HTML) 1 Page - NEC |
1 / 6 page NE85002 SERIES FEATURES • CLASS A OPERATION • HIGH EFFICIENCY: ηADD ≥ 39% TYP • BROADBAND CAPABILITY • PACKAGE OPTIONS: Chip Hermetic Package • PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES • PROVEN RELIABILITY DESCRIPTION The NE8500295 power GaAs FET covers the 3.5 to 8.5 GHz frequency range with three different Class A, 2 W partially matched devices. Each packaged device has an input lumped element matching network. The NE8500200 is the six-cell recessed gate chip used in the "95" package. The device incorporates a Ti-Al gate structure, SiO2 glassivation and plated heat sink technology. PART NUMBER NE85002001 NE8500295-4 NE8500295-6 NE8500295-8 PACKAGE OUTLINE 00 (CHIP) 95 95 95 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX IDSS Saturated Drain Current VDS = 2.5 V, VGS = 0 V mA 950 1900 950 1900 950 1900 950 1900 VP Pinch-off Voltage VDS = 2.5 V, ID = 8 mA V -3.0 -1.0 -3.0 -1.0 -3.0 -1.0 -3.0 -1.0 gm Transconductance VDS = 2.5 V, ID = IDSS mS 600 600 600 600 BVGDO Drain-Gate Breakdown Voltage IGD = 8 mA V 18 18 18 18 IGS Gate to Source Current, VDS = 10 V, IDSQ = 450 mA, POUT = PTEST mA -2.4 2.4 -2.4 2.4 -2.4 2.4 -2.4 2.4 RTH Thermal Resistance (Channel-to-Case) °C/W 10 15 15 15 15 PTEST2 Power Output at Test Point VDS = 10 V, IDS = 450 mA set PIN = 27.0 dBm dBm 33.8 33.5 PIN = 24.5 dBm dBm 33.8 PIN = 25.5 dBm dBm 33.8 GL Linear Gain VDS = 10 V, IDS = 450 mA dB 8.0 9.0 10.5 9.5 8.0 ηADD3 Power Added Efficiency at PTEST %42 474539 ELECTRICAL CHARACTERISTICS (TC = 25°C) TYPICAL PERFORMANCE PART POUT FREQUENCY GL NUMBER RANGE (dBm) (GHz) (dB) NE8500200 33.8 MIN 2.0 to 10 8.0 MIN NE8500295-4 33.8 MIN 3.5 to 4.5 10.5 MIN NE8500295-6 33.8 MIN 5.5 to 6.5 9.5 MIN NE8500295-8 33.5 MIN 7.5 to 8.5 8.0 MIN SELECTION CHART 2 WATT C-BAND POWER GaAs MESFET Notes: 1. Six-cell chip: all cells are used. RF performance of the chip is determined by packaging 10 chips per wafer. Wafer rejection criteria for standard devices are 2 rejects per 10 samples. 2. This is a production test. Test frequencies are: -4 @ 4.2 GHz, -6 @ 6.5 GHz, -8 and NE8500200 @ 8.5 GHz. 3. California Eastern Laboratories ηADD = x 100% POUT - PIN VDS - ID |
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