PART NUMBER

NE76100

PACKAGE OUTLINE

00 (CHIP)

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

dB

0.8

1.4

dB

12.0

Output Power at 1 dB Gain Compression Point, f = 4 GHz

dBm

12.5

dBm

15.0

dB

11.5

dB

13.5

mA

30

60

100

V

-3.0

-1.1

-0.5

mS

20

45

µA

1.0

10

Thermal Resistance

°C/W

190

Notes:

1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects

for 10 samples.

2. Chip mounted on an infinite heat sink.

DESCRIPTION

NE76100 is a high performance gallium arsenide metal semi-

conductor field effect transistor chip. Its low noise figure makes

this device appropriate for use in the second or third stages of

low noise amplifiers operating in the 1-12 GHz frequency

range. The device is fabricated using ion implantation for

improved RF and DC performance, reliability, and uniformity.

The NE76100 is suitable for a wide variety of commercial and

industrial applications.

NEC's stringent quality assurance and test procedures assure

the highest reliability and performance.

GENERAL PURPOSE

GaAs MESFET

NE76100

FEATURES

•

LOW NOISE FIGURE:

NF = 0.8 dB typical at f = 4 GHz

•

HIGH ASSOCIATED GAIN:

Frequency, f (GHz)

NOISE FIGURE & ASSOCIATED

GAIN vs. FREQUENCY

California Eastern Laboratories

1

10

20

4

3.5

3

2.5

2

1.5

1

0.5

0

Ga

NF

24

21

18

15

12

9

6

3

0