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PMBTA06 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PMBTA06 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 29 3 Philips Semiconductors Product specification NPN general purpose transistor PMBTA06 THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =80V − 50 nA IEBO emitter cut-off current IC = 0; VEB =5V − 50 nA hFE DC current gain IC = 10 mA; VCE = 1 V 100 − IC = 100 mA; VCE = 1 V 100 − VCEsat collector-emitter saturation voltage IC = 100 mA; IB =10mA − 0.25 V VBE base-emitter voltage IC = 100 mA; VCE =1V − 1.2 V fT transition frequency IC = 10 mA; VCE = 2 V; f = 100 MHz 100 − MHz |
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