Specifications and information are subject to change without notice

WJ Communications, Inc

• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

Page 3 of 5

October 2006

SCG015

¼ Watt, High Linearity InGaP HBT Amplifier

Product Information

The Communications Edge

TM

1960 MHz Application Circuit (SCG015B-PCB1960)

Typical RF Performance at 25

°C

∗ Please see note 2 on page 1.

IND

ID=L3

L=3.3 nH

RES

ID=R3

R=220 Ohm

CAP

ID=C4

C=56 pF

CAP

ID=C5

C=56 pF

CAP

ID=C1

C=56 pF

IND

ID=L2

L=15 nH

RES

ID=R1

R=30 Ohm

IND

ID=L1

L=15 nH

CAP

ID=C2

C=1000 pF

CAP

CAP

ID=C6

C=56 pF

RES

ID=R4

R=22 Ohm

DIODE1

ID=D1

CAP

ID=C8

C=1.2 pF

CAP

ID=C7

C=1.2 pF

RES

ID=R2

R=390 Ohm

SUBCKT

NET="SCG015"

PORT

P=2

Z=50 Ohm

PORT

P=1

Z=50 Ohm

+8 V

ID=C3

C=.1uF

a system using a DC regulator.

boards. It is not specifically required in the final circuit layout in

The diode D1 is used as over-voltage protection on the evaluation

8.2 v

Ssg, OIP3 & P1dB vs.

Temperature @ 1.96GHz

10

12

14

16

18

20

22

24

26

-40

-15

10

35

60

85

Temperature (°C)

36

37

38

39

40

41

42

43

44

Gain

P1dB

OIP3

ACPR1 vs. Pout

vs. Temperature at 1.96GHz

-70

-65

-60

-55

-50

-45

-40

11

13

15

17

Pout (dBm)

85°C

-40°C

25°C

2140 MHz Application Circuit (SCG015B-PCB2140)

Typical RF Performance at 25

°C

∗ Please see note 2 on page 1.

IND

ID=L3

L=3.3 nH

RES

ID=R3

R=220 Ohm

CAP

ID=C4

C=56 pF

CAP

ID=C5

C=56 pF

CAP

ID=C1

C=56 pF

IND

ID=L2

L=15 nH

RES

ID=R1

R=30 Ohm

IND

ID=L1

L=15 nH

CAP

ID=C2

C=1000 pF

CAP

CAP

ID=C6

C=56 pF

RES

ID=R4

R=22 Ohm

DIODE1

ID=D1

CAP

ID=C8

C=1 pF

CAP

ID=C7

C=.7 pF

RES

ID=R2

R=390 Ohm

SUBCKT

NET="SCG015"

PORT

P=2

Z=50 Ohm

PORT

P=1

Z=50 Ohm

+8 V

ID=C3

C=.1uF

a system using a DC regulator.

boards. It is not specifically required in the final circuit layout in

The diode D1 is used as over-voltage protection on the evaluation

8.2 v

Ssg, OIP3, & P1dB vs.

Temperature @ 2.14GHz

12

14

16

18

20

22

24

-40

-15

10

35

60

85

Temperature (°C)

36

37

38

39

40

41

42

Ssg

P1dB

OIP3

Frequency

1960 MHz

S21 – Gain

16.5 dB

S11 – Input Return Loss

-16 dB

S22 – Output Return Loss

-11 dB

Output P1dB

+24 dBm

Output IP3

∗

(+9 dBm / tone, 1 MHz spacing)

+40 dBm

Channel Power

(@-45 dBc ACPR, IS-95 9 channels fwd)

+17 dBm

Noise Figure

5 dB

Device Voltage

+5 V

Quiescent Current

100 mA

Frequency

2140 MHz

S21 – Gain

15 dB

S11 – Input Return Loss

-20 dB

S22 – Output Return Loss

-10 dB

Output P1dB

+24 dBm

Output IP3

∗

(+9 dBm / tone, 1 MHz spacing)

+40 dBm

Noise Figure

5 dB

Device Voltage

+5 V

Quiescent Current

100 mA

C7 placed at silkscreen marker ‘A” or center of component

placed at 3.9 deg. @ 1900 MHz away from pin 1.

C8 is placed at silkscreen

marker ‘7” or center of

component placed at 32 deg.

@ 1.9 GHz away from pin 3.

C7 placed at silkscreen marker ‘A” or center of

component placed at 4.4 deg. @ 2.14 GHz away

from pin 1.

C8 is placed at silkscreen marker ‘7” or

center of component placed at 37 deg. @

2.14 GHz away from pin 3.