MBM29DL323BE80TR datasheet(10/84 Pages) SPANSION

Part #	MBM29DL323BE80TR

Description	FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation

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MBM29DL32XTE/BE80/90

10

MBM29DL32XTE/BE User Bus Operations (BYTE

==== VIL)

Legend : L

= VIL, H = VIH, X = VIL or VIH,

= Pulse input. See DC Characteristics for voltage levels.

*1 : Manufacturer and device codes are accessed via a command register write sequence. See “MBM29DL32XTE/

BE Command Definitions”.

*2 : Refer to the section on Sector Group Protection.

*3 : WE can be VIL if OE is VIL, OE at VIH initiates the write operations.

*4 : VCC

= 3.3 V ± 10%

*5 : Also used for the extended sector group protection.

Operation

CE

OE WE

DQ15

/A-1

A0

A1

A6

A9

DQ7 to

DQ0

RESET

WP/ACC

Auto-Select Manufacturer Code*1

LL

H

L

LLL

VID

Code

H

X

Auto-Select Device code*1

LL

H

L

H

L

VID

Code

H

X

Read*3

LL

H

A-1

A0

A1

A6

A9

DOUT

HX

Standby

H

X

High-Z

H

X

Output Disable

L

H

X

High-Z

H

X

Write (Program/Erase)

L

H

L

A-1

A0

A1

A6

A9

DIN

HX

Enable Sector Group Protection

*2, *4

LVID

LL

H

L

VID

XH

X

Verify Sector Group Protection*2, *4

LL

H

L

H

L

VID

Code

H

X

Temporary Sector Group

Unprotection*5

XXX

X

XXX

X

VID

X

Reset (Hardware) /Standby

X

High-Z

L

X

Boot Block Sector Write Protection

X

L

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