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MBM29PL32TM10TN Datasheet(PDF) 3 Page - SPANSION

Part # MBM29PL32TM10TN
Description  FLASH MEMORY CMOS 32 M (4M X 8/2M X 16) BIT MirrorFlash
Download  68 Pages
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Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
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MBM29PL32TM10TN Datasheet(HTML) 3 Page - SPANSION

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MBM29PL32TM/BM90/10
3
s FEATURES
• 0.23
µµµµm Process Technology
• Single 3.0 V read, program and erase
Minimizes system level power requirements
• Industry-standard pinouts
48-pin TSOP (1) (Package suffix: TN - Normal Bend Type)
48-ball FBGA(Package suffix: PBT)
• Minimum 100,000 program/erase cycles
• High performance Page mode
Fast 8 bytes / 4 words access capability
• Sector erase architecture
Eight 8K byte and sixty-three 64K byte sectors
Eight 4K word and sixty-three 32K word sectors
Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• HiddenROM
256 bytes / 128 words of HiddenROM, accessible through a “HiddenROM Entry” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC input pin
At VIL, allows protection of outermost two 8K bytes / 4K words sectors, regardless of sector protection/unpro-
tection status
At VACC, increases program performance
• Embedded EraseTM* Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM* Algorithms
Automatically writes and verifies data at specified address
•Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switches themselves to low power mode
• Program Suspend/Resume
Suspends the program operation to allow a read in another address
• Low VCC write inhibit
≤≤≤≤ 2.5 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector Group Protection
Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector protect command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection
Temporary sector group unprotection via the RESET pin
This feature allows code changes in previously locked sectors
• In accordance with CFI (Common Flash Memory Interface)
* : Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.


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