MBM29PL32TM90TN datasheet(8/68 Pages) SPANSION

Part #	MBM29PL32TM90TN

Description	FLASH MEMORY CMOS 32 M (4M X 8/2M X 16) BIT MirrorFlash

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MBM29PL32TM/BM90/10

8

MBM29PL32TM/BM User Bus Operations (Byte Mode : BYTE = VIL)

Legend : L = VIL, H = VIH, X = VIL or VIH. See “s ELECTRICAL CHARACTERISTICS 1. DC Characteristics” for

voltage levels.

Hi-Z = High-Z, VID = 11.5 V to 12.5 V

*1 : Manufacturer and device codes may also be accessed via a command register write sequence.

See “MBM29PL32TM/BM Standard Command Definitions”.

*2 : Refer to “Sector Group Protection”.

*3 : DIN or DOUT as required by command sequence, data pulling, or sector protect algorithm

*4 : If WP/ACC = VIL, the outermost two sectors remain protected.

If WP/ACC = VIH, the outermost two sectors will be protected or unprotected as determined by the method

specified in “Sector Group Protection” in page 23.

Operation

CE OE WE

DQ15/

A-1

A0

A1

A2

A3

A6

A9

DQ0 to

DQ7

RESET

WP/

ACC

Standby

H

X

Hi-Z

H

X

Autoselect Manufacture Code*1

LL

H

L

LL

L

VID

Code

H

X

Autoselect Device Code*1

LL

H

L

H

L

VID

Code

H

X

Read

L

H

A-1

A0

A1

A2

A3

A6

A9

DOUT

HX

Output Disable

L

H

X

Hi-Z

H

X

Write (Erase)

L

H

L

A-1

A0

A1

A2

A3

A6

A9

*3

H

*4

Enable Sector Group Protection*2

LHL

L

LH

L

X

*3

VID

H

Temporary Sector Group

Unprotection

X

XXX

X

*3

VID

H

Reset (Hardware)

X

Hi-Z

L

X

Sector Write Protection

X

H

L

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