MBM29LV160BM90PBT datasheet(3/57 Pages) SPANSION

Part #	MBM29LV160BM90PBT

Description	FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM

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MBM29LV160TM/BM90

3

s FEATURES

• 0.23

µµµµm Process Technology

• Single 3.0 V read, program and erase

Minimizes system level power requirements

• Industry-standard pinouts

48-pin TSOP (1) (Package suffix: TN - Normal Bend Type)

48-ball FBGA (Package suffix: PBT)

• Minimum 100,000 program/erase cycles

• High performance

90 ns maximum access time

• Sector erase architecture

One 16K bytes, two 8K bytes, one 32K bytes, and thirty-one 64K bytes sectors in byte mode

One 8K words, two 4K words, one 16K words, and thirty-one 32K words sectors in word mode

Any combination of sectors can be concurrently erased. Also supports full chip erase

• Boot Code Sector Architecture

T = Top sector

B = Bottom sector

• Embedded EraseTM* Algorithms

Automatically pre-programs and erases the chip or any sector

• Embedded ProgramTM* Algorithms

Automatically program and verifies data at specified address

•Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready/Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switches themselves to low power mode

• Program Suspend/Resume

Suspends the program operation to allow a read in another address

• Low VCC write inhibit

≤≤≤≤ 2.5 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read data and/or program in another sector within the same device

• Sector Protection

Hardware method disables any combination of sectors from program or erase operations

• Sector Protection Set function by Extended sector protect command

• Fast Programming Function by Extended Command

• Temporary sector unprotection

Temporary sector unprotection via the RESET pin

This feature allows code changes in previously locked sectors

• In accordance with CFI (Common Flash Memory Interface)

* : Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.

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Fujitsu Component Limit...	MBM29LV160B	767Kb / 60P	16M (2M x쨈 8/1M x 16) BIT
Fujitsu Component Limit...	MBM29LV160B-12	767Kb / 60P	16M (2M x쨈 8/1M x 16) BIT
SPANSION	MBM29LV160B-12	731Kb / 58P	FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
Fujitsu Component Limit...	MBM29LV160B-12PBT	767Kb / 60P	16M (2M x쨈 8/1M x 16) BIT
SPANSION	MBM29LV160B-12PBT	731Kb / 58P	FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT

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