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MBM29F004BC-90PD Datasheet(PDF) 2 Page - SPANSION |
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MBM29F004BC-90PD Datasheet(HTML) 2 Page - SPANSION |
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2 / 53 page  MBM29F004TC/004BC-70/90 2 (Continued) The MBM29F004TC/BC is programmed by executing the program command sequence. This will invoke the Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Each sector can be programmed and verified in less than 0.5 seconds. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. Any individual sector is typically erased and verified within 1.0 second (if already completely preprogrammed) . This device also features a sector erase architecture. The sector erase mode allows for sectors of memory to be erased and reprogrammed without affecting other sectors. The MBM29F004TC/BC is erased when shipped from the factory. The MBM29F004TC/BC device also features hardware sector group protection. This feature will disable both program and erase operations in any combination of sectors of memory. This can be achieved in-system or via programming equipment. Fujitsu has implemented an Erase Suspend feature that enables the user to put erase on hold for any period of time to read data from or program data to a non-busy sector. True background erase can thus be achieved. The device features single 5.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations during power transitions. The end of program or erase is detected by Data Polling of DQ7, or by the Toggle Bit I feature on DQ6 output pin. Once the end of a program or erase cycle has been completed, the device internally resets to the read mode. Fujitsu's Flash technology combines years of EPROM and E2PROM experience to produce the highest levels of quality, reliability, and cost effectiveness. The MBM29F004TC/BC memory electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the EPROM programming mechanism of hot electron injection. s PACKAGE 32-pin plastic TSOP (1) 32-pin plastic TSOP (1) 32-pin plastic QFJ (PLCC) (FPT-32P-M24) (FPT-32P-M25) (LCC-32P-M02) Marking Side Marking Side |
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