MBM29DL34BF70TN datasheet(10/68 Pages) SPANSION

Part #	MBM29DL34BF70TN

Description	FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation

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MBM29DL34TF/BF70

10

MBM29DL34TF/BF User Bus Operations Table (Byte Mode : BYTE

==== VIL)

Legend : L

= VIL, H = VIH, X = VIL or VIH, See “s DC CHARACTERISTICS” for voltage levels.

*1: Manufacturer and device codes may also be accessed via a command register write sequence. See

“MBM29DL34TF/BF Command Definitions Table”.

*2: Refer to section on “8. Sector Group Protection” in s FUNCTIONAL DESCRIPTION.

*3: WE can be VIL if OE is VIL, OE at VIH initiates the write operations.

*4: VCC

= 2.7 V to 3.6 V

*5: Also used for extended sector group protection.

Operation

CE

OE WE

DQ15

/A-1

A0

A1

A2

A3

A6

A9

DQ7 to DQ0 RESET

WP/

ACC

Standby

H

X

XXXXXX

High-Z

H

X

Autoselect

Manufacturer Code *1

LL

H

L

LLLLL

VID

Code

H

X

Autoselect Device Code

*1

LL

H

L

H

L

LLL

VID

Code

H

X

Extended Auto-Select

Device Code *1

L

H

L

HHH

L

VID

Code

H

X

L

H

L

HHHH

L

VID

Code

H

X

Read *3

LL

H

A-1

A0

A1

A2

A3

A6

A9

DOUT

HX

Output Disable

L

H

X

XXXXXX

High-Z

H

X

Write (Program/Erase)

L

H

L

A-1

A0

A1

A2

A3

A6

A9

DIN

HX

Enable Sector Group

Protection *2, *4

LVID

LLL

H

L

VID

XH

X

Verify Sector Group

Protection *2, *4

LL

H

L

H

LLL

VID

Code

H

X

Temporary Sector

Group Unprotection *5

XXX

X

XXXXXX

X

VID

X

Reset (Hardware)

XXX

X

XXXXXX

High-Z

L

X

Boot Block Sector Write

Protection

XXX

X

XXXXXX

X

L

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