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MBM29BS32LF18PBT Datasheet(PDF) 3 Page - SPANSION

Part # MBM29BS32LF18PBT
Description  BURST MODE FLASH MEMORY CMOS 32M (2M X 16) BIT
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Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
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MBM29BS32LF18PBT Datasheet(HTML) 3 Page - SPANSION

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MBM29BS/BT32LF-18/25
3
s
s
s
s FEATURES
•0.17
µµµµm process technology
• Single 1.8 volt read, program and erase (1.65 V to 1.95 V)
• Simultaneous Read/Write operation (Dual Bank)
• All Sectors Being Protected Upon Power-up
The device aims for high-speed read of stored codes, thus to fully prevent it from much anticipated wrong
operational procedures, programming and erasure, it adopts All-Sectors Lock for ultimate all sector protection
by default upon power-up.
• FlexBankTM *1
Bank A: 8M bit (8K words
× 4 and 32K words × 15)
Bank B: 8M bit (32K words
× 16)
Bank C: 8M bit (32K words
× 16)
Bank D: 8M bit (8K words
× 4 and 32K words × 15)
• Enhanced I/OTM *2 (VCCQ) Feature
Input/ Output voltage generated on the device is determined based on the VI/O level
(MBM29BS32LF: 1.8V VCCQ and MBM29BT32LF: 3.0V VCCQ)
• High Performance Burst frequency reach at 54MHz
Burst access times of 13.5 ns @ 30 pF at industrial temperature range
Asynchronous random access times of 70 ns (at 30 pF)
Synchronous latency of 106 ns with 1.8 V VCCQ, and 106.5 ns with 3.0 V VCCQ (at 30 pF)
• Programmable Burst Read Interface
Linear Burst: 8, 16, and 32 words with wrap-around
• Compatible with JEDEC-standard commands
Uses same software commands as E2PROMs
• Minimum 100,000 program/erase cycles
• Sector Erase Architecture
Eight 8K words, sixty-two 32K words sectors.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Write Protect Pin (WP)
At VIL, allows protection of “outermost” 2
× 8K words on low end of boot sectors(SA0 and SA1), regardless of
sector protection/unprotection status
• Accelerate Pin (ACC)
At VACC, increases program performance.
At VIL, hardware protect method to lock all sectors.
• Embedded EraseTM *2 Algorithms
Automatically preprograms and erases the chip or any sector
• Embedded ProgramTM *2 Algorithms
Automatically writes and verifies data at specified address
•Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Automatic sleep mode
When address remain stable, the device automatically switches itself to low power mode
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
• In accordance with CFI (Common Flash Interface)
• Hardware reset pin (RESET)
Hardware method to reset the device for reading array data
To avoid initiation of a write cycle during Vcc power-up/down, Reset must be VIL for defined time.
(Continued)


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