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PMBT2222 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PMBT2222 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  1999 Apr 27 3 Philips Semiconductors Product specification NPN switching transistors PMBT2222; PMBT2222A THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current PMBT2222 IE = 0; VCB =50V − 10 nA IE = 0; VCB =50V; Tj = 125 °C − 10 µA collector cut-off current PMBT2222A IE = 0; VCB =60V − 10 nA IE = 0; VCB =60V; Tj = 125 °C − 10 µA IEBO emitter cut-off current IC = 0; VEB =5V PMBT2222A − 10 nA hFE DC current gain IC = 0.1 mA; VCE =10V 35 − IC = 1 mA; VCE =10V 50 − IC = 10 mA; VCE =10V 75 − IC = 10 mA; VCE =10V; Tamb = −55 °C35 − IC = 150 mA; VCE = 10 V 100 300 IC = 150 mA; VCE =1V 50 − DC current gain IC = 500 mA; VCE =10V PMBT2222 30 − PMBT2222A 40 − VCEsat collector-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 PMBT2222 − 400 mV PMBT2222A − 300 mV collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 PMBT2222 − 1.6 V PMBT2222A − 1V VBEsat base-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 PMBT2222 − 1.3 V PMBT2222A 0.6 1.2 V base-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 PMBT2222 − 2.6 V PMBT2222A − 2V Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz − 8pF |
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Similar Description - PMBT2222 |
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