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NE960R275 Datasheet(PDF) 2 Page - NEC |
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NE960R275 Datasheet(HTML) 2 Page - NEC |
2 / 3 page RECOMMENDED OPERATING LIMITS SYMBOLS PARAMETERS UNITS MIN TYP MAX VDS Drain to Source Voltage V 9 9 TCH Channel Temperature °C 130 GCOMP Gain Compression dBcomp 3 ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 15 VGS Gate to Source Voltage V -7 Pt Total Power Dissipation W 2.5 ID Drain Current mA 350 IGF Gate Current (forward) mA 2.5 IGR Gate Current (reverse) mA -2.5 TCH Channel Temperature °C 175 TSTG Storage Temperature °C -65 to +175 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. NE960R275 TYPICAL PERFORMANCE CURVES (TA = 25°C) Input Power, PIN (dBm) Input Power, PIN (dBm) Input Power, PIN (dBm) OUTPUT POWER AND EFFICIENCY vs. INPUT POWER DRAIN CURRENT AND LINEAR GAIN vs. INPUT POWER GATE CURRENT vs. INPUT POWER 25 20 15 10 30 45 30 15 0 60 510 20 25 15 f = 14.5 GHz (1 tone) VDS = 9 V, IDSQ = 90 mA RG = 1 K Ω 150 100 50 0 200 12 10 8 6 14 510 20 25 15 f = 14.5 GHz (1 tone) VDS = 9 V, IDSQ = 90 mA RG = 1 K Ω 1.0 0.5 0.0 -0.5 1.5 510 20 25 15 f = 14.5 GHz (1 tone) VDS = 9 V, IDSQ = 90 mA RG = 1 K Ω |
Similar Part No. - NE960R275_01 |
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Similar Description - NE960R275_01 |
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