PMBFJ211 datasheet(5/12 Pages) PHILIPS

Part #	PMBFJ211

Description	N-channel field-effect transistors

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 12 page

1997 Dec 01

5

Philips Semiconductors

Product speciﬁcation

N-channel ﬁeld-effect transistors

PMBFJ210; PMBFJ211; PMBFJ212

Fig.2

Drain current as a function of gate-source

cut-off voltage; typical values.

VDS = 15 V; Tj =25 °C.

handbook, halfpage

0

−2

−4

−6

40

30

10

0

20

MGM277

IDSS

(mA)

VGSoff (V)

Fig.3

Common-source transfer admittance as a

function of gate-source cut-off voltage;

typical values.

VDS = 15 V; Tj =25 °C.

handbook, halfpage

0

−2

−4

−6

12

0

4

8

MGM278

VGSoff (V)

yfs

(mS)

Fig.4

Common-source output conductance as a

function of gate-source cut-off voltage;

typical values.

VDS = 15 V; Tamb =25 °C.

handbook, halfpage

0

−2

−4

−6

80

60

20

0

40

MGM279

gos

(

µS)

VGSoff (V)

Fig.5 Output characteristics; typical values.

PMBFJ210.

Tj =25 °C.

handbook, halfpage

010

8

6

2

0

4

2

468

MGM280

ID

(mA)

VDS (V)

VGS = 0 V

−200 mV

−400 mV

−600 mV

−800 mV

−1 V

−1.4 V

−1.2 V

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