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PMBFJ111 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PMBFJ111 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 6 page  April 1995 3 Philips Semiconductors Product specification N-channel junction FETs PMBFJ111; PMBFJ112; PMBFJ113 THERMAL CHARACTERISTICS Tj =P(Rth j-t + Rth t−s + Rth s-a) + Tamb Notes 1. Mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm. 2. Mounted on printed circuit board. STATIC CHARACTERISTICS Tj =25 °C. SYMBOL PARAMETER MAX. UNIT Rth j-a from junction to ambient (note 1) 430 K/W Rth j-a from junction to ambient (note 2) 500 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT −IGSS reverse gate current −VGS = 15 V; VDS =0 − 1nA IDSS drain current VGS = 0; VDS = 15 V PMBFJ111 20 − mA PMBFJ112 5 − PMBFJ113 2 − −V (BR)GSS gate-source breakdown voltage −IG =1 µA; VDS =0 40 − V −VGS(off) gate-source cut-off voltage ID =1 µA; VDS =5 V PMBFJ111 3 10 V PMBFJ112 1 5 PMBFJ113 0.5 3 RDS(on) drain-source on-resistance VGS = 0 V; VDS = 0.1 V PMBFJ111 − 30 Ω PMBFJ112 − 50 PMBFJ113 − 100 |
Similar Part No. - PMBFJ111 |
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Similar Description - PMBFJ111 |
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