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NE68100 Datasheet(PDF) 4 Page - California Eastern Labs

Part # NE68100
Description  NPN SILICON HIGH FREQUENCY TRANSISTOR
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Manufacturer  CEL [California Eastern Labs]
Direct Link  http://www.cel.com
Logo CEL - California Eastern Labs

NE68100 Datasheet(HTML) 4 Page - California Eastern Labs

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NE681 SERIES
FREQ.
NFOPT
GA
Γ
Γ
Γ
Γ
ΓOPT
(MHz)
(dB)
(dB)
MAG
ANG
Rn/50
500
1.21
12.45
0.75
47
1.15
800
1.69
7.72
0.74
72
0.97
1000
1.95
5.96
0.68
88
0.71
1500
2.52
3.12
0.63
122
0.34
NE68133
TYPICAL NOISE PARAMETERS (TA = 25°C)
VCE = 2.5 V, IC = 1.0 mA
500
.92
14.52
0.68
47
0.42
800
1.20
10.57
0.63
70
0.34
1000
1.35
9.29
0.57
87
0.30
1500
1.71
6.53
0.50
120
0.17
2000
2.00
5.53
0.44
168
0.11
VCE = 2.5 V, IC = 3 mA
500
0.86
16.37
0.54
47
0.24
800
1.00
12.41
0.51
67
0.20
1000
1.08
11.07
0.46
86
0.18
1500
1.25
8.61
0.36
128
0.12
2000
1.40
6.99
0.35
172
0.10
FREQ.
NFOPT
GA
Γ
Γ
Γ
Γ
ΓOPT
(MHz)
(dB)
(dB)
MAG
ANG
Rn/50
500
1.20
14.10
0.78
47
1.28
800
1.45
8.42
0.75
72
0.84
1000
1.67
8.37
0.68
95
0.56
NE68139
TYPICAL NOISE PARAMETERS (TA = 25°C)
VCE = 2.5 V, IC = 1 mA
500
0.90
15.71
0.63
44
0.43
800
1.10
12.30
0.56
72
0.26
1000
1.26
11.66
0.53
98
0.20
1500
1.70
8.85
0.49
145
0.12
2000
2.20
7.12
0.57
178
0.07
VCE = 8 V, IC = 7 mA
500
1.15
20.50
0.26
42
0.17
1000
1.25
15.62
0.16
133
0.14
1500
1.4
12.49
0.20
176
0.09
2000
1.6
10.48
0.31
-165
0.14
3000
2.15
8.00
0.53
-123
0.48
4000
3.0
6.81
0.71
-101
0.90
VCE = 2.5 V, IC = 3 mA
500
0.88
18.20
0.45
44
0.25
800
1.00
14.62
0.39
73
0.19
1000
1.08
13.29
0.37
99
0.16
1500
1.30
10.54
0.35
151
0.09
2000
1.80
8.60
0.43
-177
0.07
VCE = 8 V
f = 2 GHz
f = 3 GHz
f = 4 GHz
12
10
8
6
4
2
0
1
2
3
5
7
10
20
30
50
Collector Current, IC (mA)
NE68100 & NE68135
INSERTION GAIN vs.
COLLECTOR CURRENT
Frequency, f (GHz)
VCE = 8 V
IC = 20 mA
NE68133
|S21E|
2
MAG
NE68100
|S21E|2
MAG
NE68135
30
25
20
15
10
5
0
0.1
0.2 0.3
0.5 0.7 1
2
3
5 7 10
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
TYPICAL PERFORMANCE CURVES (TA = 25°C)
VCE = 2.5 V, IC = 0.3 mA
VCE = 2.5 V, IC = 0.3 mA


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