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PMBF4391 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # PMBF4391
Description  N-channel FETs
Download  7 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PMBF4391 Datasheet(HTML) 2 Page - NXP Semiconductors

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April 1995
2
Philips Semiconductors
Product specification
N-channel FETs
PMBF4391;
PMBF4392; PMBF4393
DESCRIPTION
Symmetrical silicon n-channel
depletion type junction field-effect
transistors on a plastic
microminiature envelope intended for
application in thick and thin-film
circuits. The transistors are intended
for low-power chopper or switching
applications in industry.
PINNING
Note
1. Drain and source are
interchangeable.
Marking code
1
= drain
2
= source
3
= gate
PMBF4391 = p6J
PMBF4392 = p6K
PMBF4393 = p6G
Fig.1 Simplified outline and symbol, SOT23.
handbook, halfpage
12
g
d
s
3
Top view
MAM385
QUICK REFERENCE DATA
PMBF4391
PMBF4392
PMBF4393
Drain-source voltage
± V
DS
max.
40
40
40
V
Drain current
VDS = 20 V; VGS =0
IDSS
>
50
25
5
mA
Gate-source cut-off voltage
VDS = 20 V; ID = 1 nA
−V(P)GS
>
4
2
0.5
V
<
10
5
3
V
Drain-source resistance (on) at f = 1 kHz
ID = 0; VGS =0
Rds on
<
30
60
100
Feedback capacitance at f = 1 MHz
−V
GS = 12 V; VDS =0
Crs
<
3.5
3.5
3.5
pF
Turn-off time
VDD = 10 V; VGS =0
ID = 12 mA; −VGSM = 12 V
toff
<
20
−−
ns
ID = 6 mA; −VGSM = 7 V
toff
<−
35
ns
ID = 3 mA; −VGSM = 5 V
toff
<−
50
ns


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