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PMBF4391 Datasheet(PDF) 2 Page - NXP Semiconductors |
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PMBF4391 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page April 1995 2 Philips Semiconductors Product specification N-channel FETs PMBF4391; PMBF4392; PMBF4393 DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power chopper or switching applications in industry. PINNING Note 1. Drain and source are interchangeable. Marking code 1 = drain 2 = source 3 = gate PMBF4391 = p6J PMBF4392 = p6K PMBF4393 = p6G Fig.1 Simplified outline and symbol, SOT23. handbook, halfpage 12 g d s 3 Top view MAM385 QUICK REFERENCE DATA PMBF4391 PMBF4392 PMBF4393 Drain-source voltage ± V DS max. 40 40 40 V Drain current VDS = 20 V; VGS =0 IDSS > 50 25 5 mA Gate-source cut-off voltage VDS = 20 V; ID = 1 nA −V(P)GS > 4 2 0.5 V < 10 5 3 V Drain-source resistance (on) at f = 1 kHz ID = 0; VGS =0 Rds on < 30 60 100 Ω Feedback capacitance at f = 1 MHz −V GS = 12 V; VDS =0 Crs < 3.5 3.5 3.5 pF Turn-off time VDD = 10 V; VGS =0 ID = 12 mA; −VGSM = 12 V toff < 20 −− ns ID = 6 mA; −VGSM = 7 V toff <− 35 − ns ID = 3 mA; −VGSM = 5 V toff <− − 50 ns |
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