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PMBF170 Datasheet(PDF) 4 Page - NXP Semiconductors |
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PMBF170 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 8 page  April 1995 4 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor PMBF170 CHARACTERISTICS Tj =25 °C unless otherwise specified Drain-source breakdown voltage min. typ. 60 90 V V ID =10 µA; VGS =0 V(BR) DSS Drain-source leakage current VDS = 25 V; VGS =0 IDSS max. 500 nA VDS = 48 V; VGS =0 IDSS max. 1 µA Gate-source leakage current VGS = 15 V; VDS =0 IGSS max. 10 nA Gate-source cut-off voltage min. max. 0.8 3.0 V V ID = 1 mA; VDS =VGS VGS(th) Drain-source on-resistance typ. max. 2.5 5.0 Ω Ω ID = 200 mA; VGS =10V RDS(on) Transfer admittance min. typ. 100 200 mS mS ID = 200 mA; VDS =10V Yfs Input capacitance typ. max. 25 40 pF pF VDS = 10 V; VGS = 0 V; f = 1 MHz Ciss Output capacitance typ. max. 22 30 pF pF VDS = 10 V; VGS = 0 V; f = 1 MHz Coss Feedback capacitance typ. max. 6 10 pF pF VDS = 10 V; VGS = 0 V; f = 1 MHz Crss Switching times ton toff max. max. 10 15 ns ns VGS = 0 to 10 V; ID = 200 mA ; VDD = 50 V |
Similar Part No. - PMBF170 |
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Similar Description - PMBF170 |
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