Specifications and information are subject to change without notice

WJ Communications, Inc

• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

Page 9 of 14 May 2007 ver 1

AP603

High Dynamic Range 7W 28V HBT Amplifier

2010-2025 MHz Application Circuit

Typical Performance at 25

°C at an

output power of +30 dBm

Frequency

2015 MHz

Total Output Power

+30 dBm

Power Gain

12.3 dB

Input Return Loss

11 dB

Output Return Loss

14 dB

IMD3 @ +30 dBm PEP

-48 dBc

Operating Current, Icc

230 mA

Collector Efficiency

15.5 %

Output P1dB

+38.2 dBm

Quiescent Current, Icq

160 mA

Vpd, Vbias

+5 V

Vcc

+28 V

Notes:

1. The primary RF microstrip line is 50

Ω.

2. Components shown on the silkscreen but not on the schematic are not used.

3. The center of C22 is placed at 0.185” (16.3

° @ 2015 MHz) from the center of C1.

4. The center of C1 is placed at 0.705” (61.9

° @ 2015 MHz) from the center of C25.

5. The center of C25 is placed at 0.140” (12.3

° @ 2015 MHz) from the center of C5.

6. The center of C5 is placed at 0.125” (11.0

° @ 2015 MHz) from the edge of the AP603 (U1).

7. The center of C30 is placed at 0.250” (41.2

° @ 2015 MHz) from the edge of the AP603 (U1).

8. The center of C19 is placed at 0.490” (43.0

° @ 2015 MHz) from the center of C23.

9. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.

2010-2025 MHz Application Circuit Performance Plots

Gain vs. Output Power vs. Frequency

CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C

8

9

10

11

12

13

30

32

34

36

38

40

Output Power (dBm)

2000 MHz

2015 MHz

2025 MHz

S11, S22 vs. Frequency

Vcc = 28V, Icq = 160 mA, 25 ˚C

-25

-20

-15

-10

-5

0

1.96

1.98

2

2.02

2.04

2.06

2.08

Frequency (GHz)

S11

S22

Efficiency vs. Output Power vs. Frequency

CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C

0

10

20

30

40

50

22

26

30

34

38

Output Power (dBm)

2000 MHz

2010 MHz

2025 MHz

ACLR1 vs. Output Power vs. Icq

3 carrier TD-SCDMA, Vcc = 28V, 2015 MHz, 25 ˚C

-65

-60

-55

-50

-45

-40

20

21

22

23

24

25

26

27

Average Output Power (dBm)

140 mA

160 mA

180 mA

200 mA

PAR = 9.6 dB @ 0.01% prob

IQ Mod Filter : 2.1 MHz

Sample clock: 32 MHz

BW = 1.28 MHz

ACLR vs. Output Power vs. Icq

3 carrier TD-SCDMA, Vcc = 28V, Icq = 160 mA, 2015 MHz, 25 ˚C

-65

-60

-55

-50

-45

-40

20

21

22

23

24

25

26

27

Average Output Power (dBm)

ACLR1

ACLR2

PAR = 9.6 dB @ 0.01% prob

IQ Mod Filter : 2.1 MHz

Sample clock: 32 MHz

BW = 1.28 MHz

Efficiency vs. Output Power vs. Frequency

3 carrier TD-SCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C

0

2

4

6

8

10

20

21

22

23

24

25

26

27

Average Output Power (dBm)

2010 MHz

2015 MHz

2025 MHz

PAR = 9.6 dB @ 0.01% prob

IQ Mod Filter : 2.1 MHz

Sample clock: 32 MHz

BW = 1.28 MHz

1.8pF

See note 3

See note 6

C30

3.3pF

See note 7

5.6pF

See note 4

0.8pF

See note 8

C25

0.8pF

See note 5

W= 0.030”

L = 1.000”

C7

1000pF