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AP603-F Datasheet(PDF) 9 Page - WJ Communication. Inc. |
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AP603-F Datasheet(HTML) 9 Page - WJ Communication. Inc. |
9 / 14 page Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 9 of 14 May 2007 ver 1 AP603 High Dynamic Range 7W 28V HBT Amplifier 2010-2025 MHz Application Circuit Typical Performance at 25 °C at an output power of +30 dBm Frequency 2015 MHz Total Output Power +30 dBm Power Gain 12.3 dB Input Return Loss 11 dB Output Return Loss 14 dB IMD3 @ +30 dBm PEP -48 dBc Operating Current, Icc 230 mA Collector Efficiency 15.5 % Output P1dB +38.2 dBm Quiescent Current, Icq 160 mA Vpd, Vbias +5 V Vcc +28 V Notes: 1. The primary RF microstrip line is 50 Ω. 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of C22 is placed at 0.185” (16.3 ° @ 2015 MHz) from the center of C1. 4. The center of C1 is placed at 0.705” (61.9 ° @ 2015 MHz) from the center of C25. 5. The center of C25 is placed at 0.140” (12.3 ° @ 2015 MHz) from the center of C5. 6. The center of C5 is placed at 0.125” (11.0 ° @ 2015 MHz) from the edge of the AP603 (U1). 7. The center of C30 is placed at 0.250” (41.2 ° @ 2015 MHz) from the edge of the AP603 (U1). 8. The center of C19 is placed at 0.490” (43.0 ° @ 2015 MHz) from the center of C23. 9. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ. 2010-2025 MHz Application Circuit Performance Plots Gain vs. Output Power vs. Frequency CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C 8 9 10 11 12 13 30 32 34 36 38 40 Output Power (dBm) 2000 MHz 2015 MHz 2025 MHz S11, S22 vs. Frequency Vcc = 28V, Icq = 160 mA, 25 ˚C -25 -20 -15 -10 -5 0 1.96 1.98 2 2.02 2.04 2.06 2.08 Frequency (GHz) S11 S22 Efficiency vs. Output Power vs. Frequency CW tone, Vcc = 28V, Icq = 160 mA, 25 ˚C 0 10 20 30 40 50 22 26 30 34 38 Output Power (dBm) 2000 MHz 2010 MHz 2025 MHz ACLR1 vs. Output Power vs. Icq 3 carrier TD-SCDMA, Vcc = 28V, 2015 MHz, 25 ˚C -65 -60 -55 -50 -45 -40 20 21 22 23 24 25 26 27 Average Output Power (dBm) 140 mA 160 mA 180 mA 200 mA PAR = 9.6 dB @ 0.01% prob IQ Mod Filter : 2.1 MHz Sample clock: 32 MHz BW = 1.28 MHz ACLR vs. Output Power vs. Icq 3 carrier TD-SCDMA, Vcc = 28V, Icq = 160 mA, 2015 MHz, 25 ˚C -65 -60 -55 -50 -45 -40 20 21 22 23 24 25 26 27 Average Output Power (dBm) ACLR1 ACLR2 PAR = 9.6 dB @ 0.01% prob IQ Mod Filter : 2.1 MHz Sample clock: 32 MHz BW = 1.28 MHz Efficiency vs. Output Power vs. Frequency 3 carrier TD-SCDMA, Vcc = 28V, Icq = 160 mA, 25 ˚C 0 2 4 6 8 10 20 21 22 23 24 25 26 27 Average Output Power (dBm) 2010 MHz 2015 MHz 2025 MHz PAR = 9.6 dB @ 0.01% prob IQ Mod Filter : 2.1 MHz Sample clock: 32 MHz BW = 1.28 MHz 1.8pF See note 3 See note 6 C30 3.3pF See note 7 5.6pF See note 4 0.8pF See note 8 C25 0.8pF See note 5 W= 0.030” L = 1.000” C7 1000pF |
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