Specifications and information are subject to change without notice

WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

Page 1 of 8 December 2006

AH118

¼ Watt, High Linearity InGaP HBT Amplifier

Product Features

compliant SOT-89 Package

Applications

Repeaters

Product Description

The AH118 is a high dynamic range driver amplifier in a

low-cost surface mount package. The InGaP/GaAs HBT is

able to achieve high performance across a broad range with

+40.5 dBm OIP3 and +24.7 dBm of compressed 1dB

power. The AH118 is available in a lead-free/green/RoHS-

compliant SOT-89 package. All devices are 100% RF and

DC tested.

The AH118 is targeted for use as a driver amplifier in

wireless infrastructure where high linearity and medium

power is required. Internal biasing allows the AH118 to

maintain high linearity over temperature and operate

directly off a single +5V supply. This combination makes

the device an excellent candidate for transceiver line cards

in current and next generation multi-carrier 3G base

stations.

Functional Diagram

RF IN

GND

RF OUT

GND

1

2

3

4

Function

Pin No.

Input / Base

1

Output / Collector

3

Ground

2, 4

Specifications

(1)

Parameter

Units

Min

Typ

Max

Operational Bandwidth

MHz

60

3500

Test Frequency

MHz

1900

Gain

dB

13.5

16.5

Input Return Loss

dB

12

Output Return Loss

dB

20

Output P1dB

dBm

+23

+24.7

Output IP3

(2)

dBm

+39.5

+40.5

IS-95A Channel Power

@ -45 dBc ACPR

dBm

+18

wCDMA Channel Power

@ -45 dBc ACLR, 2140 MHz

dBm

+16.7

Noise Figure

dB

4.3

Operating Current Range

mA

140

160

175

Device Voltage

V

+5

1. Test conditions unless otherwise noted: 25ºC, Vsupply = +5 V, in tuned application circuit.

2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The

suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

Absolute Maximum Rating

Parameter

Rating

Operating Case Temperature

-40 to +85 °C

Storage Temperature

-65 to +150 °C

RF Input Power (continuous)

+15 dBm

Device Voltage

+6 V

Device Current

220 mA

Junction Temperature

+250 °C

Operation of this device above any of these parameters may cause permanent damage.

Typical Performance

(3)

Parameter

Units

Typical

Frequency

MHz

900

1900

2140

S21 - Gain

dB

20.4

16.5

16.3

S11 - Input R.L.

dB

-15

-12

-15

S22 - Output R.L.

dB

-12

-20

-16

Output P1dB

dBm

+24.2

+24.7

+24.7

Output IP3

dBm

+40

+40.5

+40.5

IS-95A Channel Power

@ -45 dBc ACPR,

dBm

+18.2

+18

wCDMA Channel Power

@ -45 dBc ACLR

dBm

+16.7

Noise Figure

dB

4.0

4.3

4.8

Supply Bias

+5 V @ 160 mA

3. Typical parameters reflect performance in a tuned application circuit:

Vsupply = +5 V, 160 mA,

+25 °C

Ordering Information

Part No.

Description

AH118-89G

High Linearity InGaP HBT Amplifier

(lead-free/green/RoHS-compliant SOT-89 package)

AH118-89PCB900

900 MHz Evaluation Board

AH118-89PCB1900

1900 MHz Evaluation Board

AH118-89PCB2140

2140 MHz Evaluation Board