PIP3117-B datasheet(3/6 Pages) PHILIPS

Part #	PIP3117-B

Description	Logic level TOPFET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Logic level TOPFET

PIP3117-B

OUTPUT CHARACTERISTICS

Limits are for -40˚C

≤ T

mb ≤ 150˚C; typicals are for Tmb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Off-state

V

IS = 0 V

V

(CL)DSS

Drain-source clamping voltage

I

D = 10 mA

50

-

V

I

DM = 2 A; tp ≤ 300 µs; δ ≤ 0.01

50

60

70

V

I

DSS

Drain source leakage current

V

DS = 40 V

-

100

µA

T

mb = 25 ˚C

-

0.1

10

µA

On-state

I

DM = 6 A; tp ≤ 300 µs; δ ≤ 0.01

R

DS(ON)

Drain-source resistance

V

IS ≥ 4.4 V

-

95

m

Ω

T

mb = 25 ˚C

-

36

50

m

Ω

V

IS ≥ 4 V

-

100

m

Ω

T

mb = 25 ˚C

-

39

55

m

Ω

OVERLOAD CHARACTERISTICS

-40˚C

≤ T

mb ≤ 150˚C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Short circuit load

V

DS = 13 V

I

D

Drain current limiting

V

IS = 5 V;

T

mb = 25˚C

16

24

32

A

4.4 V

≤ V

IS ≤ 5.5 V

12

-

36

A

4 V

≤ V

IS ≤ 5.5 V

8

-

36

A

Overload protection

V

IS = 5 V;Tmb = 25˚C

P

D(TO)

Overload power threshold

device trips if P

D > PD(TO)

40

120

160

W

T

DSC

Characteristic time

which determines trip time

1

200

350

600

µs

Overtemperature protection

T

j(TO)

Threshold junction

150

170

-

˚C

temperature

2

1 Trip time t

d sc varies with overload dissipation PD according to the formula td sc ≈ TDSC / ln[ PD / PD(TO) ].

2 This is independent of the dV/dt of input voltage V

IS.

May 2001

3

Rev 1.000

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