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PIP3115-B Datasheet(PDF) 2 Page - NXP Semiconductors |
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PIP3115-B Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 6 page Philips Semiconductors Product specification Logic level TOPFET PIP3115-B LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS Continuous drain source voltage 1 - - 50 V I D Continuous drain current V IS = 5 V; Tmb = 25 ˚C - self - A limited I D Continuous drain current V IS = 5 V; Tmb ≤ 110 ˚C - 8 A I I Continuous input current - -5 5 mA I IRM Non-repetitive peak input current t p ≤ 1 ms -10 10 mA P D Total power dissipation T mb ≤ 25 ˚C - 40 W T stg Storage temperature - -55 175 ˚C T j Continuous junction temperature 2 normal operation - 150 ˚C T sold Case temperature during soldering - 260 ˚C ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V C Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 k Ω OVERVOLTAGE CLAMPING LIMITING VALUES At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Inductive load turn-off I DM = 8 A; VDD ≤ 20 V E DSM Non-repetitive clamping energy T mb ≤ 25 ˚C - 100 mJ E DRM Repetitive clamping energy T mb ≤ 95 ˚C; f = 250 Hz - 20 mJ OVERLOAD PROTECTION LIMITING VALUE With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload - overtemperature and short circuit load. SYMBOL PARAMETER REQUIRED CONDITION MIN. MAX. UNIT V DS Drain source voltage 3 4 V ≤ V IS ≤ 5.5 V 0 35 V THERMAL CHARACTERISTIC SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Thermal resistance R th j-mb Junction to mounting base - - 2.5 3.1 K/W R th j-a Junction to ambient minimum footprint FR4 PCB - 50 - K/W 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher T j is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 3 All control logic and protection functions are disabled during conduction of the source drain diode. May 2001 2 Rev 1.000 |
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