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BPV23NF Datasheet(PDF) 1 Page - Vishay Siliconix |
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BPV23NF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 7 page BPV23NF(L) Document Number 81513 Rev. 1.6, 13-Nov-06 Vishay Semiconductors www.vishay.com 1 94 8633 Silicon PIN Photodiode Description BPV23NF(L) is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on GaAlAs IR emitters ( λ p = 950 nm, srel(λ = 875 nm) > 90 %). Lens radius and chip position are perfectly matched to the chip size, giving high sensitivity without com- promising the viewing angle. In comparison with flat packages the spherical lens package achieves a sensitivity improvement of 80 %. Features • Large radiant sensitive area (A = 5.7 mm2) • Wide viewing angle ϕ = ± 60° • Improved sensitivity • Fast response times • Low junction capacitance • Plastic package with universal IR filter • Option "L": long lead package optional available with suffix "L"; e.g.: BPV23FL • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Infrared remote control and free air transmission sys- tems in combination with IR emitter diodes (TSU.-, TSI.-, or TSH.-Series). High sensitivity detector for high data rate transmission systems. The IR filter matches perfectly to the high speed infra- red emitters in the 830 nm to 880 nm wavelength range. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified e4 Parameter Test condition Symbol Value Unit Reverse Voltage VR 60 V Power Dissipation Tamb ≤ 25 °C PV 215 mW Junction Temperature Tj 100 °C Operating Temperature Range Tamb - 55 to + 100 °C Storage Temperature Range Tstg - 55 to + 100 °C Soldering Temperature t ≤ 5 s Tsd 260 °C Thermal Resistance Junction/ Ambient RthJA 350 K/W |
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