PHX9NQ20T datasheet(3/9 Pages) PHILIPS

Part #	PHX9NQ20T

Description	N-channel TrenchMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

N-channel TrenchMOS

 transistor

PHX9NQ20T , PHF9NQ20T

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T

j = 25˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

I

S

Continuous source current

-

8.7

A

(body diode)

I

SM

Pulsed source current (body

-

35

A

diode)

V

SD

Diode forward voltage

I

F = 9 A; VGS = 0 V

-

0.85

1.2

V

t

rr

Reverse recovery time

I

F = 9 A; -dIF/dt = 100 A/µs;

-

92

-

ns

Q

rr

Reverse recovery charge

V

GS = -10 V; VR = 25 V

-

0.5

-

µC

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

hs = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

R.M.S. isolation voltage from all

SOT186A package; f = 50-60 Hz;

-

2500

V

three terminals to external

sinusoidal waveform; R.H.

≤ 65%;

heatsink

clean and dustfree

V

isol

Repetitive peak voltage from all

SOT186 package; R.H.

≤ 65%;

-

1500

V

three terminals to external

clean and dustfree

heatsink

C

isol

Capacitance from pin 2 to

f = 1 MHz

-

10

-

pF

external heatsink

November 2000

3

Rev 1.100

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PHX9NQ20T Datasheet(PDF) 3 Page - NXP Semiconductors

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