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CAT5127TDI-10-T3 Datasheet(PDF) 4 Page - Catalyst Semiconductor |
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CAT5127TDI-10-T3 Datasheet(HTML) 4 Page - Catalyst Semiconductor |
4 / 13 page CAT5127, CAT5129 Doc. No. 2127 Rev. B 4 © 2007 Catalyst Semiconductor, Inc. Characteristics subject to change without notice ABSOLUTE MAXIMUM RATINGS (1) Parameters Ratings Units Supply Voltage VCC to GND -0.5 to +7V V Inputs CS ¯¯ to GND -0.5 to VCC +0.5 V INC ¯¯¯ to GND -0.5 to VCC +0.5 V U/D ¯ to GND -0.5 to VCC +0.5 V H to GND -0.5 to VCC +0.5 V L to GND -0.5 to VCC +0.5 V W to GND -0.5 to VCC +0.5 V Parameters Ratings Units Operating Ambient Temperature Commercial (‘C’ or Blank suffix) 0 to 70 ºC Industrial (‘I’ suffix) -40 to +85 ºC Junction Temperature +150 ºC Storage Temperature -65 to 150 ºC Lead Soldering (10 sec max) +300 ºC RELIABILITY CHARACTERISTICS Symbol Parameter Test Method Min Typ Max Units VZAP (2) ESD Susceptibility MIL-STD-883, Test Method 3015 2000 V ILTH (2) (3) Latch-Up JEDEC Standard 17 100 mA TDR Data Retention MIL-STD-883, Test Method 1008 100 Years NEND Endurance MIL-STD-883, Test Method 1003 1,000,000 Stores Notes: (1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability. (2) This parameter is tested initially and after a design or process change that affects the parameter. (3) Latch-up protection is provided for stresses up to 100mA on address and data pins from -1V to VCC + 1V (4) These parameters are periodically sampled and are not 100% tested. |
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Similar Description - CAT5127TDI-10-T3 |
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