PHX6NA60E datasheet(1/5 Pages) PHILIPS

Part #	PHX6NA60E

Description	PowerMOS transistors Low capacitance Avalanche energy rated

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Objective specification

PowerMOS transistors

PHX6NA60E

Low capacitance

Avalanche energy rated

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Repetitive Avalanche Rated

• Fast switching

V

DSS = 600 V

• Low feedback capacitance

• Stable off-state characteristics

I

D = 3.9 A

• High thermal cycling performance

• Low thermal resistance

R

DS(ON) ≤ 1.2 Ω

GENERAL DESCRIPTION

PINNING

SOT186A

N-channel,

enhancement

mode

DESCRIPTION

field-effect

power

transistor,

intended for use in off-line switched

1

gate

mode power supplies, T.V. and

computer monitor power supplies,

2

drain

d.c. to d.c. converters, motor control

circuits

and

general

purpose

3

source

switching applications.

case

isolated

The PHX6NA60E is supplied in the

SOT186A

full

pack,

isolated

package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DSS

Drain-source voltage

T

j = 25 ˚C to 150˚C

-

600

V

DGR

Drain-gate voltage

T

j = 25 ˚C to 150˚C; RGS = 20 kΩ

-

600

V

GS

Gate-source voltage

-

± 30

V

I

D

Continuous drain current

T

hs =

25 ˚C; V

GS = 10 V

-

3.9

A

T

hs = 100 ˚C; VGS = 10 V

-

2.6

A

I

DM

Pulsed drain current

T

hs = 25 ˚C

-

26

A

P

D

Total dissipation

T

hs = 25 ˚C

-

45

W

T

j, Tstg

Operating junction and

- 55

150

˚C

storage temperature range

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

E

AS

Single pulse avalanche

Unclamped inductive load, ID = 6.5A;

-

570

mJ

energy

V

DD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω;

V

GS = 10 V

E

AR

Repetitive avalanche energy

1

-

9.5

mJ

I

AS, IAR

Avalanche current

-

6.5

A

d

g

s

12 3

case

1 pulse width and repetition rate limited by T

j max.

January 1998

1

Rev 1.000

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