HMIC PIN Diode Variable Attenuator

1.70-2.20 GHz

MA4VAT2000-1277T

M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

V2

1

Features

• RoHs and ELV compliant

• Bandwidth: 1.70 GHz to 2.20 GHz

• 1.2 dB Insertion Loss, Typical

• 1.4:1 VSWR, Typical

• 24 dB Attenuation, Typical

• 40 dBm IIP3, Typical ( 1MHz Offset, @ +0dBm Pinc )

• 0-1.5 Volt Control Voltage.

• User can add an External Resistor for higher

D.C. Voltage requirements.

Extra Features

• Usable Bandwidth: 1.20 GHz to 2.50 GHz

• 1.5 dB Insertion Loss, Max

• 2:1 VSWR, Max

• 23 dB Attenuation, Max

Description and Applications

M/A-COM’s MA4VAT2000-1277T is a HMIC PIN

Diode Variable Attenuator which utilizes an integrated 90

degree 3dB hybrid with a pair of Silicon PIN Diodes

to perform the required attenuation function as

Voltage (Current) is applied. This device operates

from 0 to 1.5 Volts at 260 uA typical control current

for maximum attenuation. The user can add external

biasing resistors to the bias ports for higher voltage

requirements as required.

M/A-COM’s

MA4VAT2000-1277T

PIN

Diode

Variable Attenuator is designed for AGC Circuit

Applications requiring:

• Lower Insertion Loss

• Lower distortion through attenuation

• Larger dynamic range for wide spread

spectrum applications

MLP 3mm Package

(Circuit Side View)

Absolute Maximum Ratings

1,2

Parameter

Maximum Ratings

Operating Temperature

-40 °C to +85 °C

Storage Temperature

-65 °C to +150 °C

Junction Temperature

+175 °C

Control Current

50mA per Diode

Reversed Current @ -30 V

l -50nA l

RF C.W. Incident Power

+33 dBm C.W.

1. All the above are at Room Temperature except as noted

2. Exceeding the above Limits may cause permanent damage

PIN Configuration

PIN 1

PIN 16

PIN

Function

PIN

Function

1

GND

9

DC2

2

GND

10

GND

11

GND

4

GND

12

DC1

5

GND

13

GND

6

RF2

14

GND

7

GND

15

RF1

8

GND

16

GND

Center Paddle is RF and D.C. Ground

RF Input/Output Ports are Functionally Symmetrical

3

GND