PHX23NQ10T datasheet(5/8 Pages) PHILIPS

Part #	PHX23NQ10T

Description	N-channel TrenchMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

N-channel TrenchMOS

™ transistor

PHX23NQ10T

Fig.7. Typical transfer characteristics.

I

D = f(VGS)

Fig.8. Typical transconductance, T

j = 25 ˚C.

g

fs = f(ID)

Fig.9. Normalised drain-source on-state resistance.

R

DS(ON)/RDS(ON)25 ˚C = f(Tj)

Fig.10. Gate threshold voltage.

V

GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

Fig.11. Sub-threshold drain current.

I

D = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS

Fig.12. Typical capacitances, C

iss, Coss, Crss.

C = f(V

DS); conditions: VGS = 0 V; f = 1 MHz

0

10

20

30

40

50

02

46

8

10

VGS / V

ID / A

Tj / C = 25

150

Threshold Voltage, VGS(TO) (V)

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

-60 -40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature, Tj (C)

0

2

4

6

8

10

12

14

16

18

20

0

2

4

6

8

10 12 14 16 18 20 22 24 26 28 30

Drain current, ID / (A)

Transconductance, gfs (S)

150 C

Tj = 25 C

Drain current, ID (A)

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Gate-source voltage, VGS (V)

minimum

typical

maximum

Normalised On-state Resistance.

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

-60 -40 -20

0

20

40

60

80 100 120 140 160

Junction temperature , Tj (C)

10

100

1000

10000

0.1

1

10

100

Drain-Source Voltage, VDS (V)

Capacitances, Ciss, Coss, Crss (pF)

Ciss

Coss

Crss

September 1999

5

Rev 1.000

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