Electronic Components Datasheet Search |
|
PHX1N40 Datasheet(PDF) 2 Page - NXP Semiconductors |
|
PHX1N40 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification PowerMOS transistor PHX1N40 THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-hs Thermal resistance junction to with heatsink compound - - 5 K/W heatsink R th j-a Thermal resistance junction to - 55 - K/W ambient ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 400 - - V voltage ∆V (BR)DSS / Drain-source breakdown V DS = VGS; ID = 0.25 mA - 0.45 - V/K ∆T j voltage temperature coefficient R DS(ON) Drain-source on resistance V GS = 10 V; ID = 1.25 A - 2.0 3.5 Ω V GS(TO) Gate threshold voltage V DS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V g fs Forward transconductance V DS = 30 V; ID = 1.25 A 0.5 1.5 - S I DSS Drain-source leakage current V DS = 400 V; VGS = 0 V - 1 25 µA V DS = 320 V; VGS = 0 V; Tj = 125 ˚C - 30 250 µA I GSS Gate-source leakage current V GS = ±30 V; VDS = 0 V - 10 200 nA Q g(tot) Total gate charge I D = 2.5 A; VDD = 320 V; VGS = 10 V - 20 25 nC Q gs Gate-source charge - 2 3 nC Q gd Gate-drain (Miller) charge - 8 12 nC t d(on) Turn-on delay time V DD = 200 V; ID = 2.5 A; - 10 - ns t r Turn-on rise time R G = 24 Ω; RD = 78 Ω -25 - ns t d(off) Turn-off delay time - 46 - ns t f Turn-off fall time - 25 - ns L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L s Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 240 - pF C oss Output capacitance - 44 - pF C rss Feedback capacitance - 26 - pF SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I S Continuous source current T hs = 25˚C - - 2.5 A (body diode) I SM Pulsed source current (body T hs = 25˚C - - 10 A diode) V SD Diode forward voltage I S = 2.5 A; VGS = 0 V - - 1.2 V t rr Reverse recovery time I S = 2.5 A; VGS = 0 V; - 200 - ns dI/dt = 100 A/ µs Q rr Reverse recovery charge - 2.0 - µC June 1997 2 Rev 1.000 |
Similar Part No. - PHX1N40 |
|
Similar Description - PHX1N40 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |