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MA4E2514 Datasheet(PDF) 2 Page - Tyco Electronics |
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MA4E2514 Datasheet(HTML) 2 Page - Tyco Electronics |
2 / 4 page SurMount TM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair MA4E2514 Series V 2.00 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 2 Electrical Specifications: @ 25 °C (Measured as Single Diodes) Rt is the dynamic slope resistance where Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA) and Rs is the Ohmic Resistance Handling All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. The use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components. The top surface of the die has a protective polyimide coating to minimize damage. The rugged construction of these SurMount devices allows the use of standard handling and die attach techniques. It is important to note that industry standard electrostatic discharge (ESD) control is required at all times, due to the sensitive nature of Schottky junctions. Bulk handling should insure that abrasion and mechanical shock are minimized. Parameter Value Operating Temperature -40 °C to +150 °C Storage Temperature -40 °C to +150 °C Forward Current 20 mA Reverse Voltage 5 V RF C.W. Incident Power + 20 dBm RF & DC Dissipated Power 50 mW Absolute Maximum Ratings 1 1. Exceeding any of these values may result in permanent damage Model Number Type Recommended Frequency Range Vf @ 1 mA ( mV ) Vf @ 10 uA ( V ) Ct @ 0 V ( pF ) Rt Slope Resistance ( Vf1 - Vf2 )/(10.5 mA-9.5 mA ) ( Ω ) MA4E2514L Low Barrier DC - 18 GHz 330 Max 300 Typ 3 Min 5 Typ 0.12 Max 0.10 Typ 16 Typ 20 Max MA4E2514M Medium Barrier DC - 18 GHz 470 Max 400 Typ 3 Min 5 Typ 0.12 Max 0.10 Typ 12 Typ 18 Max Max Forward Voltage Difference ∆Vf @ 1 mA: 10 mV Max Total Capacitance Difference ∆Ct @ 0 V: 0.03 pF Die Bonding Die attach for these devices is made simple through the use of surface mount die attach technology. Mounting pads are conveniently located on the bottom surface of these devices, and are opposite the active junction. The devices are well suited for higher temperature solder attachment onto hard substrates. 80Au/20Sn and Sn63/Pb37/Ag solders are acceptable for usage. For Hard substrates, we recommend utilizing a vacuum tip and force of 60 to 100 grams applied uniformly to the top surface of the device, using a hot gas bonder with equal heat applied across the bottom mounting pads of the device. When soldering to soft substrates, it is recommended to use a lead-tin interface at the circuit board mounting pads. Position the die so that its mounting pads are aligned with the circuit board mounting pads. Reflow the solder paste by applying Equal heat to the circuit at both die-mounting pads. The solder joint must Not be made one at a time, creating un-equal heat flow and thermal stress. Solder reflow should Not be performed by causing heat to flow through the top surface of the die. Since the HMIC glass is transparent, the edges of the mounting pads can be visually inspected through the die after die attach is completed. |
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