High Barrier Silicon Schottky Diodes:

Bridge Octoquad

Features

n

Designed for High Dynamic Range Applications

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Low Parasitic Capitance and Inductance

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Low Parasitic Resistance

n

Recommended for DC-12GHz

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Uniform Electrical Characteristics with Each Junction

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Rugged HMIC Construction with Polyimide Scratch

Protection

Description

The MA4E2099-1284 Bridge Octoquad is offered for high

dynamic range applications. This device is constructed with

Silicon High Barrier Schottky Diodes fabricated with the

patented Heterolithic Microwave Integrated Circuit (HMIC)

process to ensure electrical characteristics uniformity for each

junction.

HMIC circuits consist of Silicon pedestals which

form diodes or via conductors embedded in a glass dielectric,

which acts as the low dispersion, low loss, microstrip

transmission medium. The combination of silicon and glass

allows HMIC devices to have excellent loss and power

dissipation characteristics in a low profile, reliable device.

Applications

The devices can be used in higher power mixer, detector, and

limiter circuits through 12 GHz.

V 2.00

ODS-1284 Outline (Topview)

1

Dim

Inches

Millimeters

Min.

Max.

Min.

Max.

A

0.0285

0.0297

0.725

0.755

B

0.0285

0.0297

0.725

0.755

C

0.0040

0.0060

0.102

0.153

D Sq.

0.0035

0.090

E

0.0165

0.0173

0.420

0.440

0.0043

0.110

Equivalent Circuit

1

4

2

3

Parameter

Value

Operating Temperature

-55 °C to +150 °C

Storage Temperature

-55 °C to +150 °C

Forward Current

20 mA

Reverse Voltage

l -9 V l

RF C.W. Incident Power

+ 25 dBm

RF & DC Dissipated Power

100 mW

Absolute Maximum Ratings

1

@ +25 °C

1. Exceeding any of these values may result in permanent

damage