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Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Condition
Characteristics
Unit
Min.
Typ.
Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
off-state current
Reverse current
Gate trigger current
Gate trigger voltage
On-state voltage
Forward on voltage
Reverse current
Resistance
B value
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
tr
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
IDM
IRRM
IGT
VGT
VTM
VFM
IRRM
R
B
VCE=600V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=50mA
VGE=15V, Ic=50A
chip
terminal
VGE=0V, VCE=10V, f=1MHz
VCC=300V
IC=50A
VGE=±15V
RG=51
Ω
IF=50A
chip
terminal
IF=50A
VCES=600V, VGE=0V
VCE=0V, VGE=±20V
IC=30A, VGE=15V chip
terminal
VCC=300V
IC=30A
VGE=±15V
RG=82
Ω
VR=600V
VDM=800V
VRM=800V
VD=6V, IT=1A
VD=6V, IT=1A
ITM=50A
chip
terminal
IF=50A
chip
terminal
VR=800V
T=25°C
T=100°C
T=25/50°C
150
200
8.5
2.4
1.2
0.6
1.0
0.35
2.6
300
150
200
2.4
1.2
0.6
1.0
0.35
150
1.0
1.0
100
2.5
1.3
1.5
150
5000
5.5
7.8
µA
nA
V
V
pF
µs
V
ns
µA
nA
V
µs
µA
mA
mA
mA
V
V
V
µA
Ω
K
Item
Symbol
Condition
Characteristics
Unit
Min.
Typ.
Max.
Inverter IGBT
Inverter FWD
Brake IGBT
Thyristor
Converter Diode
With thermal compound
0.63
1.33
1.04
1.00
°C/W
0.90
0.05
Thermal resistance ( 1 device )
Rth(j-c)
Contact thermal resistance
*
Rth(c-f)
Thermal resistance Characteristics
IGBT Module
7MBR50SC060
* This is the value which is defined mounting on the additional cooling fin with thermal compound
1.8
1.95
0.45
0.25
0.40
0.05
1.75
1.9
1.8
1.95
0.45
0.25
0.40
0.05
1.1
1.2
1.1
1.2
5000
465
495
520
3305
3375
3450
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