PHT8N06 datasheet(6/10 Pages) PHILIPS

Part #	PHT8N06

Description	TrenchMOS transistor Standard level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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6 / 10 page

Philips Semiconductors

Product specification

TrenchMOS

™ transistor

PHT8N06T

Standard level FET

Fig.13. Typical turn-on gate-charge characteristics.

V

GS = f(QG); conditions: ID = 7 A; parameter VDS

Fig.14. Typical reverse diode current.

I

F = f(VSDS); conditions: VGS = 0 V; parameter Tj

Fig.15. Normalised avalanche energy rating.

W

DSS% = f(Tsp); conditions: ID = 2.5 A

Fig.16. Avalanche energy test circuit.

Fig.17. Switching test circuit.

0

5

10

15

0

2

4

6

8

10

12

VDS/V

QG/nC

VDS = 14V

VDS = 44V

20

40

60

80

100

120

140

Tmb / C

120

110

100

90

80

70

60

50

40

30

20

10

0

WDSS%

0

0.5

1

1.5

2

0

10

20

30

40

IF/A

VSDS/V

Tj/V =

150

25

L

T.U.T.

VDD

RGS

R 01

VDS

-ID/100

+

-

shunt

VGS

0

W

DSS = 0.5 ⋅ LID

2

⋅ BV

DSS/(BVDSS − VDD)

RD

T.U.T.

VDD

RG

VDS

+

-

VGS

0

December 1997

6

Rev 1.100

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