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PHT8N06 Datasheet(PDF) 5 Page - NXP Semiconductors |
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PHT8N06 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 10 page Philips Semiconductors Product specification TrenchMOS ™ transistor PHT8N06T Standard level FET Fig.7. Typical transfer characteristics. I D = f(VGS) ; conditions: VDS = 25 V; parameter Tj Fig.8. Typical transconductance, T j = 25 ˚C. g fs = f(ID); conditions: VDS = 25 V Fig.9. Normalised drain-source on-state resistance. a = R DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 5 A; VGS = 10 V Fig.10. Gate threshold voltage. V GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS Fig.11. Sub-threshold drain current. I D = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS Fig.12. Typical capacitances, C iss, Coss, Crss. C = f(V DS); conditions: VGS = 0 V; f = 1 MHz 01 23456789 0 5 10 15 20 ID/A VGS/V Tj/C = 150 25 BUK78xx-55 -100 -50 0 50 100 150 200 0 1 2 3 4 5 Tj / C VGS(TO) / V max. typ. min. 0 5 10 15 20 2 3 4 5 6 7 8 9 gfs/S ID/A 01 23 45 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 Sub-Threshold Conduction typ 2% 98% BUK98XX-55 -100 -50 0 50 100 150 200 0.5 1 1.5 2 2.5 Tmb / degC Rds(on) normalised to 25degC a 0.01 0.1 1 10 100 0 .1 .2 .3 .4 .5 .6 .7 .8 .9 1 VDS/V Ciss Coss Crss December 1997 5 Rev 1.100 |
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