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PHT11N06LT Datasheet(PDF) 3 Page - NXP Semiconductors |
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PHT11N06LT Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 9 page Philips Semiconductors Product specification TrenchMOS ™ transistor PHT11N06LT Logic level FET AVALANCHE LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT W DSS Drain-source non-repetitive I D = 3.6 A; VDD ≤ 25 V; - - 60 mJ unclamped inductive turn-off V GS = 5 V; RGS = 50 Ω; Tsp = 25 ˚C energy January 1998 3 Rev 1.100 |
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