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PHP78NQ03LT Datasheet(PDF) 2 Page - NXP Semiconductors |
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PHP78NQ03LT Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 14 page Philips Semiconductors PHP/PHB/PHD78NQ03LT N-channel enhancement mode field-effect transistor Product data Rev. 01 — 14 November 2001 2 of 14 9397 750 08916 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj =25to175 °C - 25 V VDGR drain-gate voltage (DC) Tj =25to175 °C; RGS =20kΩ -25 V VGS gate-source voltage (DC) - ±15 V VGSM gate-source voltage tp ≤ 50 µs; pulsed; duty cycle 25 %; Tj ≤ 150 °C - ±20 V ID drain current (DC) Tmb =25 °C; VGS =5V; Figure 2 and 3 -61 A Tmb = 100 °C; VGS =5V; Figure 2 -43 A Tmb =25 °C; VGS =10V - 75 A Tmb = 100 °C; VGS =10V - 53 A IDM peak drain current Tmb =25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 228 A Ptot total power dissipation Tmb =25 °C; Figure 1 -93 W Tstg storage temperature −55 +175 °C Tj operating junction temperature −55 +175 °C Source-drain diode IS source (diode forward) current (DC) Tmb =25 °C - 75 A ISM peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 µs - 228 A |
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