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PHB73N06T Datasheet(PDF) 8 Page - NXP Semiconductors |
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PHB73N06T Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 14 page Philips Semiconductors PHP73N06T; PHB73N06T N-channel enhancement mode field-effect transistor Product specification Rev. 01 — 12 March 2001 8 of 14 9397 750 08107 © Philips Electronics N.V. 2001. All rights reserved. Tj =25 °C and 150 °C; VGS =0V ID = 50 A; VDD = 11 V and 44 V Fig 14. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 15. Gate-source voltage as a function of gate charge; typical values. Tj = 150 o C Tj = 25 o C 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 100 90 80 70 60 50 40 30 20 10 0 IS (A) VSD (V) 003aaa091 VDD = 11 V VDD = 44 V VGS (V) QG (nC) 010 20 30 4050 60 10 8 6 4 2 0 003aaa092 |
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