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PHP73N06T Datasheet(PDF) 7 Page - NXP Semiconductors |
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PHP73N06T Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 14 page Philips Semiconductors PHP73N06T; PHB73N06T N-channel enhancement mode field-effect transistor Product specification Rev. 01 — 12 March 2001 7 of 14 9397 750 08107 © Philips Electronics N.V. 2001. All rights reserved. ID = 1 mA; VDS =VGS Tj =25 °C Fig 10. Gate-source threshold voltage as a function of junction temperature. Fig 11. Sub-threshold drain current as a function of gate-source voltage. Tj =25 °C and 175 °C; VDS > ID × RDSon VGS = 0 V; f = 1 MHz Fig 12. Forward transconductance as a function of drain current; typical values. Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 0 1 2 3 4 5 0 40 80 120 160 200 -40 -80 max. typ min VGS(th) (V) Tj ( oC) 003aaa077 2% typ 98% 10-1 10-2 10-3 10-4 10-5 10-6 0 1 2 345 ID (A) VGS (V) 003aaa078 0 204060 80 100 30 25 20 15 10 5 0 (S) gfs ID (A) 003aaa089 0 500 1000 1500 2000 2500 3000 3500 Ciss Coss Crss Ciss, Coss, Crss (pF) VDS (V) 10 102 1 10-1 10-2 003aaa090 |
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