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PIC18LF4620 Datasheet(PDF) 4 Page - Microchip Technology |
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PIC18LF4620 Datasheet(HTML) 4 Page - Microchip Technology |
4 / 8 page PIC18F2525/2620/4525/4620 DS80222B-page 4 © 2005 Microchip Technology Inc. 11. Module: Electrical Characteristics Parameters D031A and D041A have been added to Section 26-3 “DC Characteristics”, as shown below: 12. Module: Electrical Characteristics In Table 26-1: Memory Programming Require- ments, parameters D132, D132A, D133 and D133A have been changed. The changes are shown in bold: TABLE 26-1: MEMORY PROGRAMMING REQUIREMENTS 13. Module: Pinout I/O Descriptions The QFN column has been removed from Table 1-2: PIC18F2525/2620 Pinout I/O Descriptions. The PIC18F2525/2620 devices are not available in a QFN package. 26.3 DC Characteristics: PIC18F2525/2620/4525/4620 (Industrial) PIC18LF2525/2620/4525/4620 (Industrial) DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for industrial Param No. Symbol Characteristic Min Max Units Conditions VIL Input Low Voltage I/O ports: D031A with SMBus buffer VSS 0.8 V VIH Input High Voltage I/O ports: D041A with SMBus buffer 2.1 VDD V DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for industrial Param No. Sym Characteristic Min Typ† Max Units Conditions Program Flash Memory D132 VIE VDD for Block Erase 3.0 — 5.5 V Using ICSP™ port, 25°C D132A VIW VDD for Externally Timed Erase or Write 4.5 — 5.5 V Using ICSP port, 25°C D133 TIE ICSP Block Erase Cycle Time — 4 — ms VDD ≥ 4.5V D133A TIW ICSP Erase or Write Cycle Time (externally timed) 1— — ms VDD ≥ 4.5V, 25°C D133A TIW Self-Timed Write Cycle Time — 2 — ms |
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