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PHP4ND40E Datasheet(PDF) 4 Page - NXP Semiconductors

Part # PHP4ND40E
Description  PowerMOS transistors FREDFET, Avalanche energy rated
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHP4ND40E Datasheet(HTML) 4 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
PowerMOS transistors
PHP4ND40E, PHB4ND40E
FREDFET, Avalanche energy rated
Fig.1. Normalised power dissipation.
PD% = 100
⋅P
D/PD 25 ˚C = f(Tmb)
Fig.2. Normalised continuous drain current.
ID% = 100
⋅I
D/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V
Fig.3. Safe operating area. T
mb = 25 ˚C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
Fig.5. Typical output characteristics.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance.
R
DS(ON) = f(ID); parameter VGS
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
PHP2N60
1ms
1s
Zth j-mb, Transient thermal impedance (K/W)
1us
10us
100us
10ms
100ms
tp, pulse width (s)
0.001
0.01
0.1
1
10
D =
tp
tp
T
T
P
t
D
D = 0.5
0.2
single pulse
0.05
0.02
0.1
0
20
40
60
80
100
120
140
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
0
2
4
6
8
10
PHP4N40
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
5 V
6 V
6.5 V
7 V
10 V
5.5 V
VGS = 4.5 V
Tj = 25 C
10
100
1000
10000
0.1
1
10
100
PHP4N40
VDS, Drain-source voltage (Volts)
ID, Drain current (Amps)
100 us
1 ms
10 ms
RDS(ON)
=
VDS/ID
DC
tp = 10 us
02468
10
0
1
2
3
4
PHP4N40
5 V
5.5 V
10 V
ID, Drain current (Amps)
RDS(on), Drain-Source on resistance (Ohms)
4.5 V
6 V
Tj = 25 C
6.5 V
VGS = 7 V
August 1998
4
Rev 1.100


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