PHD3055E datasheet(6/10 Pages) PHILIPS

Part #	PHD3055E

Description	N-channel TrenchMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

N-channel TrenchMOS

™ transistor

PHP3055E PHD3055E

Fig.13. Typical turn-on gate-charge characteristics.

V

GS = f(QG)

Fig.14. Typical reverse diode current.

I

F = f(VSDS); conditions: VGS = 0 V; parameter Tj

Fig.15. Maximum permissible non-repetitive

avalanche current (I

AS) versus avalanche time (tAV);

unclamped inductive load

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

012

3456

78

Gate charge, QG (nC)

Gate-source voltage, VGS (V)

ID = 10A

Tj = 25 C

VDD = 11 V

VDD = 44 V

0.1

1

10

100

0.001

0.01

0.1

1

10

Avalanche time, tAV (ms)

Maximum Avalanche Current, IAS (A)

Tj prior to avalanche = 150 C

25 C

0

1

2

3

4

5

6

7

8

9

10

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

Source-Drain Voltage, VSDS (V)

Source-Drain Diode Current, IF (A)

Tj = 25 C

175 C

VGS = 0 V

August 1999

6

Rev 1.200

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PHD3055E Datasheet(PDF) 6 Page - NXP Semiconductors

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