PHP2N50E datasheet(6/10 Pages) PHILIPS

Part #	PHP2N50E

Description	PowerMOS transistors Avalanche energy rated

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

PowerMOS transistors

PHP2N50E, PHB2N50E, PHD2N50E

Avalanche energy rated

Fig.13. Typical turn-on gate-charge characteristics.

V

GS = f(QG); parameter VDS

Fig.14. Typical switching times; t

d(on), tr, td(off), tf = f(RG)

Fig.15. Normalised drain-source breakdown voltage;

V

(BR)DSS/V(BR)DSS 25 ˚C = f(Tj)

Fig.16. Source-Drain diode characteristic.

I

F = f(VSDS); parameter Tj

Fig.17. Maximum permissible non-repetitive

avalanche current (I

AS) versus avalanche time (tp);

unclamped inductive load

Fig.18. Maximum permissible repetitive avalanche

current (I

AR) versus avalanche time (tp)

0

1020

3040

0

5

10

15

20

PHP2N50

Gate charge, Qg (nC)

Gate-Source voltage, VGS (Volts)

VDD = 400 V

300 V

200 V

ID = 2 A

0

0.5

1

1.5

0

2

4

6

8

10

PHP2N50

Source-Drain voltage, VSDS (V)

Source-drain diode current, IF(A)

VGS = 0 V

150 C

Tj = 25 C

0

20

406080

100

1

10

100

1000

tr

tf

PHP2N50

Gate resistance, RG (Ohms)

Switching times, td(on), tr, td(off), tf (ns)

td(on)

td(off)

VDD = 250V

RD = 120 Ohms

Tj = 25 C

PHP2N50E

0.01

0.1

1

10

1E-06

1E-05

1E-04

1E-03

1E-02

Avalanche time, tp (s)

Non-repetitive Avalanche current, IAS (A)

125 C

VDS

ID

tp

Tj prior to avalanche = 25 C

-100

-50

0

50

100

150

0.85

0.9

0.95

1

1.05

1.1

1.15

Tj, Junction temperature (C)

Normalised Drain-source breakdown voltage

V(BR)DSS @ Tj

V(BR)DSS @ 25 C

PHP2N50E

0.001

0.01

0.1

1

10

1E-06

1E-05

1E-04

1E-03

1E-02

Avalanche time, tp (s)

Maximum Repetitive Avalanche Current, IAR (A)

125 C

Tj prior to avalanche = 25 C

December 1998

6

Rev 1.200

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