PHP2N40 datasheet(3/7 Pages) PHILIPS

Part #	PHP2N40

Description	PowerMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

PowerMOS transistor

PHP2N40

Fig.1. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25 ˚C = f(Tmb)

Fig.2. Normalised continuous drain current.

ID% = 100

⋅I

D/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V

Fig.3. Safe operating area. T

mb = 25 ˚C

I

D & IDM = f(VDS); IDM single pulse; parameter tp

Fig.4. Transient thermal impedance.

Z

th j-mb = f(t); parameter D = tp/T

Fig.5. Typical output characteristics.

I

D = f(VDS); parameter VGS

Fig.6. Typical on-state resistance.

R

DS(ON) = f(ID); parameter VGS

0

20

40

60

80

100

120

140

Tmb / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

1E-07

1E-05

1E-03

1E-01

1E+01

t / s

Zth j-mb / (K/W)

1E+01

1E+00

1E-01

1E-02

0

0.5

0.2

0.1

0.05

0.02

D =

tp

T

P

t

D

D=

0

20

40

60

80

100

120

140

Tmb / C

ID%

Normalised Current Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

5

10

15

20

25

30

0

1

2

3

4

5

6

7

8

5 V

5.5 V

6 V

6.5 V

7 V

PHP2N40

VDS, Drain-Source voltage (Volts)

ID, Drain current (Amps)

10 V

20 V

VGS = 4.5 V

Tj = 25 C

10

100

1000

0.1

1

10

100

PHP2N40

100us

1 ms

10 ms

100ms

10 us

tp =

RDS(ON)

= VDS/ID

Drain-source voltage, VDS (Volts)

Drain current, ID (Amps)

Tmb = 25 C

DC

0123

45

678

0

1

2

3

4

5

6

6.5 V

7 V

10 V

VGS = 20 V

PHP2N40

Drain current, ID (Amps)

Drain-Source on resistance, RDS(ON) (Ohms)

6 V

5.5 V

5V

Tj = 25 C

June 1997

3

Rev 1.000

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